sud50n03-10cp Vishay, sud50n03-10cp Datasheet - Page 2

• Manufacturer Part Number: sud50n03-10cp
• Description: N-channel 30-v D-s , 175c, Mosfet Pwm Optimized
• Manufacturer: Vishay

SUD50N03-10CP
Vishay Siliconix
Notes:
a.
b.
c.
www.vishay.com
2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
Parameter
a
c
c
c
c
c
a
a
a
Symbol
V
V
r
(BR)DSS
I
DS(on)
t
t
I
I
C
GS(th)
C
V
D(on)
C
Q
Q
d(on)
d(off)
GSS
I
DSS
DSS
Q
R
g
SM
I
t
oss
t
t
SD
iss
rss
S
rr
fs
gs
gd
G
r
f
g
_
New Product
C
= 25_C)
V
V
V
V
V
I
V
D
D
DS
DS
GS
GS
DS
DS
GS
] 15 A, V
= 24 V, V
= 24 V, V
I
= 15 V, V
= 10 V, I
= 10 V, I
V
V
F
= 0 V, V
V
V
V
V
DS
V
V
DS
V
V
= 15 A, di/dt = 100 A/ms
Test Condition
DS
DS
I
GS
GS
GS
DS
F
DD
DD
b
= V
= 15 A, V
= 0 V, V
= 24 V, V
= 5 V, V
= 4.5 V, I
= 0 V, I
= 15 V, I
= 10 V, I
= 15 V, R
= 15 V, R
GS
D
D
GEN
GEN
DS
GS
GS
GS
GS
= 15 A, T
= 15 A, T
, I
= 25 V, f = 1 MHz
= 4.5 V, I
= 0 V, T
= 0 V, T
GS
DS
= 10 V, R
D
GS
GS
D
D
= 250 mA
D
GS
= 250 mA
L
L
= "20 V
= 15 A
= 15 A
= 15 A
= 10 V
= 1 W
= 1 W
= 0 V
= 0 V
J
J
J
J
= 125_C
= 175_C
D
D
= 125_C
= 175_C
G
G
= 15 A
= 6 W
Min
30
50
20
1
0.0105
0.008
S-05485—Rev. B, 21-Jan-02
Typ
1725
0.85
425
120
160
4.5
4.0
1.7
60
13
10
30
55
80
Document Number: 71791
Max
"100
0.010
0.016
0.020
0.012
150
240
100
110
50
18
15
45
85
15
12
1
Unit
nA
mA
m
pF
nC
ns
ns
W
W
W
V
A
S
A
V