si4800-02 NXP Semiconductors, si4800-02 Datasheet - Page 4

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si4800-02

Manufacturer Part Number
si4800-02
Description
Si4800 N-channel Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12899
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
th(j-a)
Z th(j-amb)
(K/W)
T
10 -1
10 -2
10 2
amb
10
1
10 -4
thermal resistance from junction to ambient
= 25 C
Thermal characteristics
0.2
0.1
0.05
0.02
= 0.5
single pulse
5.1 Transient thermal impedance
10 -3
10 -2
Rev. 02 — 17 February 2004
10 -1
Conditions
mounted on a printed-circuit board;
minimum footprint; t
1
N-channel TrenchMOS™ logic level FET
p
10
10 s;
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Figure 4
P
10 2
t p
T
Min Typ Max Unit
-
t p (s)
=
-
t p
T
03af83
SI4800
t
10 3
50
4 of 12
K/W

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