si4800-02 NXP Semiconductors, si4800-02 Datasheet - Page 5

• Manufacturer Part Number: si4800-02
• Description: Si4800 N-channel Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12899
Product data
Symbol Parameter
Static characteristics
V
I
I
R
I
Dynamic characteristics
g
Q
Q
Q
t
t
t
t
Source-drain diode
V
t
DSS
GSS
D(on)
d(on)
r
d(off)
f
rr
j
fs
GS(th)
SD
DSon
g(tot)
gs
gd
= 25 C unless otherwise specified.
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
on-state drain current
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
Characteristics
Conditions
I
V
V
V
V
V
V
I
V
I
V
D
D
S
S
Rev. 02 — 17 February 2004
DS
GS
GS
GS
DS
DS
DD
GS
T
T
= 7 A; V
= 7 A; dI
= 250 A; V
= 8 A; V
j
j
= 24 V; V
= 20 V; V
= 10 V; I
= 4.5 V; I
= 15 V; I
= 15 V; I
= 0 V
= 25 C
= 55 C
5 V; V
GS
DD
S
/dt = 100 A/ s; V
GS
D
D
D
= 0 V;
D
= 15 V; V
GS
DS
= 9 A
= 9 A;
= 1.5 A; V
DS
= 7 A;
= 10 V
= 0 V
= V
= 0 V
Figure 12
GS
Figure 7
Figure 7
GS
;
Figure 9
GS
= 5 V;
= 10 V; R
N-channel TrenchMOS™ logic level FET
R
and
= 30 V;
Figure 13
8
G
= 6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
0.8
-
-
-
-
-
30
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
15.5
24
-
19
11.8
2.7
5
6
7
23
11
0.86
25
SI4800
Max
-
1
5
100
18.5
33
-
-
-
-
-
16
15
30
15
1.2
80
5 of 12
Unit
V
nA
m
m
A
S
nC
nC
nC
ns
ns
ns
ns
V
ns
A
A