BT136B-500E NXP Semiconductors, BT136B-500E Datasheet

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BT136B-500E

Manufacturer Part Number
BT136B-500E
Description
Triacs Sensitive Gate
Manufacturer
NXP Semiconductors
Datasheet
1.BT136B-500E.pdf (6 pages)
Philips Semiconductors
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope suitable for
surface mounting, intended for use in
general
switching
applications, where high sensitivity is
required in all four quadrants.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/ s.
March 1997
Triacs
sensitive gate
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
t
stg
j
mb
DRM
GM
GM
G(AV)
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
purpose
and
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
phase
bidirectional
control
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
T(RMS)
TSM
G
DRM
/dt = 0.2 A/ s
= 6 A; I
1
2
G
= 0.2 A;
3
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
1
mb
j
= 25 ˚C prior to
mb
107 ˚C
T2+ G+
T2+ G-
T2- G-
T2- G+
BT136B-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
T2
-500
500
MAX. MAX. MAX. UNIT
500E
500
25
4
1
BT136B series E
MAX.
Product specification
-600
600
150
125
3.1
0.5
25
27
50
50
50
10
600E
4
2
5
5
600
25
4
1
-800
800
800E
800
25
4
Rev 1.000
UNIT
A/ s
A/ s
A/ s
A/ s
A
G
˚C
˚C
W
W
V
A
A
A
A
V
T1
2
V
A
A
s

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BT136B-500E Summary of contents

Page 1

... 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT136B series E MAX. MAX. MAX. UNIT 500E 600E 800E 500 600 800 SYMBOL MIN. MAX. UNIT ...

Page 2

... 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / Product specification BT136B series E MIN. TYP. MAX. UNIT - - 3.0 K 3.7 K K/W MIN. TYP. MAX. UNIT - ...

Page 3

... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 time T 1.2 1 0.8 0.6 0.4 1000 - Product specification BT136B series E BT136 107 100 Tmb / C BT136 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 107˚C. mb VGT(Tj) BT136 0 50 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...

Page 4

... dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT136B series E BT136 typ max 0.5 1 1 BT136 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width t ...

Page 5

... Epoxy meets UL94 V0 at 1/8". MOUNTING INSTRUCTIONS Dimensions in mm Notes 1. Plastic meets UL94 V0 at 1/8". March 1997 10.3 max 11 max 15.4 0.85 max (x2) Fig.13. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting . 5 Product specification BT136B series E 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.000 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1997 BT136B series E 6 Product specification Rev 1.000 ...

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