fs4435 Fortune Semiconductor Corporation, fs4435 Datasheet - Page 5

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fs4435

Manufacturer Part Number
fs4435
Description
Single P-channel Enhancement Mode Power Mosfet
Manufacturer
Fortune Semiconductor Corporation
Datasheet
8.
Rev. 1.4
-1200
60
50
40
30
20
10
0
Typical Characteristics
Fig 3.Static Drain-Source On-Resistance
0
Fig 1. Drain-Source Breakdown Voltage
-1000
2
Drain Source Current ( uA )
Gate Source Voltage ( V )
-800
RDS_IDS=-11A
4
-600
BVDSS
6
-400
8
-200
10
-31.5
-32.5
-33.5
-34.5
-31
-32
-33
-34
0
12
25 deg
125 deg
25 deg
125 deg
-0.5
-1.5
-2.5
-3.5
Fig 4. Static Drain-Source On-Resistance
-1
-2
-3
50
40
30
20
10
0
0
0.4
0
Fig 2. Doide Forward Voltage
2
0.5
Gate Source Voltage ( V )
4
RDS_IDS=-8A
Voltage ( V )
0.6
6
VSD
0.7
8
0.8
10
0.9
FS4435
12
25 deg
125 deg
25 deg
125 deg
5/6

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