STB34NM60N STMicroelectronics, STB34NM60N Datasheet - Page 3

• Manufacturer Part Number: STB34NM60N
• Description: N-channel 600 V, 0.092 Ω , 29 A Mdmesh™ Ii Power Mosfet In D²pak, To-220fp, To-220, To-247
• Manufacturer: STMicroelectronics

STB34NM60N, STF34NM60N, STP34NM60N, STW34NM60N
1
Electrical ratings
Table 2.
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3.
Table 3.
1.
R
Symbol
R
R
thj-pcb
Symbol
thj-case
dv/dt
thj-amb
I
I
When mounted on FR-4 board of 1 inch², 2 oz Cu.
DM
P
V
SD
V
V
E
T
I
T
I
I
TOT
AR
ISO
DS
GS
stg
D
D
AS
J
(2)
(1)
(3)
≤ 29 A, di/dt ≤ 400 A/µs, V
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Absolute maximum ratings
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal data
C
J
= 25 °C)
= 25 °C, I
Parameter
Parameter
DS
Doc ID 17740 Rev 6
peak ≤ V
C
D
= 25 °C
= I
AR
(BR)DSS
, V
C
C
DD
= 25 °C
= 100 °C
J
= 50 V)
, V
max)
DD
= 80% V
D²PAK TO-220FP TO-220 TO-247 Unit
D
0.6
30
2
PAK, TO-220,
(BR)DSS
TO-247
116
210
29
18
3.1
- 55 to 150
Value
62.5
± 25
10.5
600
345
150
15
TO-220FP
Electrical ratings
29
18
2500
116
40
0.6
(1)
(1)
50
V/ns
Unit
°C/W
mJ
°C
W
V
V
A
A
A
A
V
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