STB34NM60N STMicroelectronics, STB34NM60N Datasheet - Page 9

• Manufacturer Part Number: STB34NM60N
• Description: N-channel 600 V, 0.092 Ω , 29 A Mdmesh™ Ii Power Mosfet In D²pak, To-220fp, To-220, To-247
• Manufacturer: STMicroelectronics

STB34NM60N, STF34NM60N, STP34NM60N, STW34NM60N
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 17740 Rev 6
1000
μF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
off
Test circuits
3.3
μF
D.U.T.
t
f
10%
AM01473v1
AM01469v1
AM01471v1
1kΩ
90%
V
V
V
9/21
G
DD
DD