STB34NM60N STMicroelectronics, STB34NM60N Datasheet - Page 4

• Manufacturer Part Number: STB34NM60N
• Description: N-channel 600 V, 0.092 Ω , 29 A Mdmesh™ Ii Power Mosfet In D²pak, To-220fp, To-220, To-247
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/21
Electrical characteristics
(T
Table 4.
Table 5.
1. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
t
t
C
I
I
C
increases from 0 to 80% V
DS(on)
C
GS(th)
d(on)
d(off)
Q
Q
DSS
GSS
Q
R
oss
t
t
oss eq
rss
iss
gs
gd
r
f
g
g
(1)
= 25 °C unless otherwise specified)
. is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source
breakdown voltage
(V
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
GS
= 0)
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
STB34NM60N, STF34NM60N, STP34NM60N, STW34NM60N
Doc ID 17740 Rev 6
V
V
V
V
R
(see
(see
V
V
(see
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
I
V
V
V
V
V
D
GS
GS
GS
DS
DD
DD
DS
DS
GS
DS
GS
G
= 1 mA
= 4.7 Ω, V
= 100 V, f = 1 MHz,
= 0
= 0, V
=300 V, I
= 480 V, I
= 10 V,
= 600 V
= 600 V, T
= ± 25 V
= V
= 10 V, I
Figure
Figure
Figure
Test conditions
Test conditions
GS
DS
, I
23),
18)
19)
D
D
D
= 0 to 480 V
GS
D
= 250 µA
C
= 14.5 A
= 14.5 A
= 29 A,
= 125 °C
= 10 V
Min.
Min.
600
-
-
-
-
-
2
2722
Typ.
1.75
Value
0.092
173
458
106
2.9
Typ.
17
34
70
84
14
45
3
oss
Max.
0.105
±100
Max.
when V
100
-
-
-
-
-
1
4
DS
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
Ω
V
V
Ω