cha2190 United Monolithic Semiconductors, cha2190 Datasheet - Page 2

• Manufacturer Part Number: cha2190
• Description: 20-30ghz Low Noise Amplifier
• Manufacturer: United Monolithic Semiconductors

CHA2190
Electrical Characteristics
Tamb = +25°C, Vd = +4V (On wafer)
Absolute Maximum Ratings
Tamb = +25°C
VSWRout Ouput VSWR (1)
VSWRin
Symbol
Symbol
(4) Operation of this device above anyone of these paramaters may cause permanent damage.
(5) Duration < 1s.
(6) See chip biasing options page 8/9
(1) These values are representative of wafer measurements without bonding wire at the RF ports.
(2)This value is a typical value when Vd=4V Vg1=Vg2=0V or not connected and can be increased
(3) This current is the typical value for low noise and low current consumption biasing :
P1dB
Ref :
Tstg
Fop
Top
IP3
Pin
NF
Vd
Vg
Id
G
G
Vd=4V , Vg1=Vg2=0V or not connected.
See chip biasing option page 8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Gain (1)
Gain flatness (1)
Input VSWR (1)
3rd order intercept point
Drain bias current (3)
Noise figure (1)
Output power at 1dB gain compression (2)
Drain bias voltage (6)
Vg1 and Vg2 max
Maximum peak input power overdrive (5)
Operating temperature range
Storage temperature range
DSCHA21902036 -05-Feb.-02-
Tel.: [phone] - Fax : [phone]
Parameter
Parameter
(4)
2/9
20-30GHz Low Noise Amplifier
Specifications subject to change without notice
Min
20
13
-55 to +125
-40 to +85
Values
Typ
2.2
15
20
11
50
4.5
0.5
+1
15
3.0:1
3.0:1
Max
30
70
3
1
Unit
dBm
V
V
°C
°C
dBm
dBm
Unit
Ghz
mA
dB
dB
dB