cha2193 United Monolithic Semiconductors, cha2193 Datasheet

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cha2193

Manufacturer Part Number
cha2193
Description
20-30ghz Low Noise Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CHA2193
Manufacturer:
UMS
Quantity:
1 400
Part Number:
cha2193-99F/00
Manufacturer:
UMS
Quantity:
1 400
Description
The CHA2193 is a three stages low noise amplifier.
It is designed for a wide range of applications, from
military
systems. The backside of the chip is both RF and
DC grounds. This helps simplify the assembly
process.
The circuit is manufactured with a HEMT process,
0.25µm gate length, via holes through the
substrate, air bridges and electron beam gate
lithography.
It is available in chip form.
Main Features
¦ 2.0 dB noise figure
¦ 18 dB 1dB gain
¦ 8 dBm output power (-1dB gain comp.)
¦ Very good broadband input matching
¦ DC power consumption, 60mA @ 3.5V
¦ Chip size :
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Symbol
Ref. : DSCHA21939042
P1dB
Fop
NF
G
Id
to
2.07 x 1.03 x 0.10 mm
commercial
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Output power at 1dB gain compression
20-30GHz Low Noise Amplifier
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Operating frequency range
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Small signal gain
Parameter
Bias current
Noise figure
communication
1/10
20
18
16
14
12
10
8
6
4
2
0
20
21
Specifications subject to change without notice
Typical on Wafer Measurements
22
Min
20
16
6
23
24
25
Typ
2.0
18
60
RoHS COMPLIANT
8
26
CHA2193
27
Max
100
2.5
30
28
Frequency ( GHz )
Gain (dB)
29
NF (dB)
30
Unit
dBm
GHz
mA
dB
dB
31
32
33

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cha2193 Summary of contents

Page 1

... Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2193 is a three stages low noise amplifier designed for a wide range of applications, from military to commercial systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HEMT process, 0.25µ ...

Page 2

... Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA21939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier Parameter Parameter ...

Page 3

... Vd DC Voltage Id Bias current (1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. Ref. : DSCHA21939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter Specifications subject to change without notice 3/10 CHA2193 ...

Page 4

... Ref. : DSCHA21939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier S12 S12 S21 dB dB ° -80,74 113,11 -40,30 169,78 -81,92 -0,74 -40,82 119,08 -77,35 25,09 -42,54 77,54 -83,41 -166,09 -51,25 127,54 -67,79 -40,02 -28,44 41,42 -76,58 -160,06 -33,45 -69,76 ...

Page 5

... Ref. : DSCHA21939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Gain S11 S22 Specifications subject to change without notice 5/10 CHA2193 ...

Page 6

... Gain 20.5 21 21.5 Ref. : DSCHA21939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier Gain S11 22.5 23 23.5 24 Specifications subject to change without notice 6/10 S22 29 30 ...

Page 7

... Then Vgs1 is reduced to obtain current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vgs1 bias voltage, but keeping the previous value for Vgs2. Ref. : DSCHA21939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Page 8

... CHA2193 Chip Assembly and Mechanical Data 1 to 10nF Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire prefered. Ref. : DSCHA21939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier Specifications subject to change without notice ...

Page 9

... Low Noise Amplifier ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA21939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Bonding pad positions. Specifications subject to change without notice 9/10 CHA2193 ...

Page 10

... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA21939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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