cha3023 United Monolithic Semiconductors, cha3023 Datasheet
cha3023
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cha3023 Summary of contents
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... GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form ...
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... Top Operating temperature Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage (2) Duration < 1s DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18GHz Wide Band Amplifier Parameter Vd Vg1 ...
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... DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18 GHz Wide Band Amplifier MS12 PS12 MS21 dB ° dB -68,86 12,95 12,27 -59,00 -65,50 13,11 -57,76 -85,24 13,74 -55,88 -101,83 14,21 -56,09 -133,36 14,38 -54,51 -146,60 14,42 -53,45 -166,51 14,50 -52,07 178,88 14,55 -52,57 165,06 ...
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... CHA3023 Chip Typical Response (On wafer measurements) : Tamb = +25° 5.0V ; Vg2 = 2V and Vg1 tuned 95mA Typical on wafer Noise Figure DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18GHz Wide Band Amplifier Typical on wafer S parameters ...
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... CHA3023 Chip Typical Response (Test Jig measurements) : Tamb = +25° 5.0V ; Vg2 = 2V and Vg1 tuned 95mA DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18 GHz Wide Band Amplifier Power compression @ 1GHz Power compression @ 12GHz ...
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... CHA3023 DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 1-18GHz Wide Band Amplifier P1dB vs Frequency Noise Figure vs Frequency Gain & Return Loss vs Frequency 6/8 Specifications subject to change without notice ...
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... Equivalent wire bo nding : 0.15 nH The CHA3023 could be used without Vg2 bias. There is a resistor bridge inside the chip. This one generates the correct value of Vg2 Bias. Pads G2a and G2 must be connected. Equivalent RF Wire Bondings: 0.15 nH (typical length of 200µm for a 25µm diameter wire). ...
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... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. DSCHA30235263 - 20 sep 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...