nt1gc64bh8a1ps Nanya Techology, nt1gc64bh8a1ps Datasheet

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nt1gc64bh8a1ps

Manufacturer Part Number
nt1gc64bh8a1ps
Description
Based On Ddr3-1066/1333 64mx16 1gb / 128mx8 2gb Sdram A-die
Manufacturer
Nanya Techology
Datasheet
NT1GC64BH8A1PS / NT2GC64B8HA1NS
1GB: 128M x 64 / 2GB: 256M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SO-DIMM
Based on DDR3-1066/1333 64Mx16 (1GB) / 128Mx8 (2GB) SDRAM A-Die
Features
•Performance:
DIMM CAS Latency
fck – Clock Freqency
tck – Clock Cycle
fDQ – DQ Burst Freqency
• 204-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
• 1GB: 128Mx64 Unbuffered DDR3 SO-DIMM based on 64Mx16
• 2GB: 256Mx64 Unbuffered DDR3 SO-DIMM based on 128Mx8
• Intended for 533MHz/667MHz applications
• Inputs and outputs are SSTL-15 compatible
• V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
Description
NT1GC64BH8A1PS-BE and NT2GC64B8HA1NS-BE are unbuffered 204-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Small
Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB) and 256Mx64 (2GB) high-speed memory
array. Modules use eight 64Mx16 (1GB) 96-ball BGA packaged devices and sixteen 128Mx8 (2GB) 78-ball BGA packaged devices. These
DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files
minimizes electrical variation between suppliers. All NANYA DDR3 SODIMMs provide a high-performance, flexible 8-byte interface in a
space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of
1066Mbps/1333Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A12 (1GB)/A0-A13 (2GB) and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.3
06/2009
DDR3 SDRAM A-Die devices.
DDR3 SDRAM A-Die devices.
clock edge
DD
= V
Speed Sort
DDQ
= 1.5V ±0.075V
PC3-8500
1.875
1066
-BE
533
7
PC3-10600
1333
-CG
667
1.5
9
Mbps
MHz
Unit
ns
1
• Programmable Operation:
• Two different termination values (Rtt_Nom & Rtt_WR)
• 13/10/2 (row/column/rank) Addressing for 1GB
• 14/10/2 (row/column/rank) Addressing for 2GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
• 1GB: SDRAMs are in 96-ball BGA Package
• 2GB: SDRAMs are in 78-ball BGA Package
• RoHS compliance + Halogen Free
- DIMM  Latency: 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION

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nt1gc64bh8a1ps Summary of contents

Page 1

... Description NT1GC64BH8A1PS-BE and NT2GC64B8HA1NS-BE are unbuffered 204-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB) and 256Mx64 (2GB) high-speed memory array. Modules use eight 64Mx16 (1GB) 96-ball BGA packaged devices and sixteen 128Mx8 (2GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs ...

Page 2

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Ordering Information Part Number NT1GC64BH8A1PS-BE DDR3-1066 NT1GC64BH8A1PS-CG DDR3-1333 PC3-10600 NT2GC64B8HA1NS-BE DDR3-1066 NT2GC64B8HA1NS-CG DDR3-1333 PC3-10600 Pin Description Pin Name Description CK0, CK1 Clock Inputs, positive line ,  ...

Page 3

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM DDR3 SDRAM Pin Assignment Pin Front Pin Back Pin REFDQ DQ4 DQ0 6 DQ5 57 7 DQ1  ...

Page 4

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Input/Output Functional Description Symbol Type Polarity CK0, CK1 Cross Input ,  point Active CKE0, CKE1 Input High Active ,  Input ...

Page 5

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Functional Block Diagram – [1GB 2 Ranks, 64Mx16 DDR3 SDRAMs] 240ohm +/-1% DQS0 LDQS ZQ  L DM0 LDM DQ[0:7] DQ[0:7] D0 DQS1 UDQS   ...

Page 6

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Functional Block Diagram – [2GB 2 Ranks, 128Mx8 DDR3 SDRAMs] 240ohm +/-1% DQS3 DQS ZQ   DM3 DM DQ[24:31] DQ[0:7] D11 240ohm +/-1% DQS1 DQS ZQ  ...

Page 7

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Serial Presence Detect (Part [1GB – 2 Ranks, 64Mx16 DDR3 SDRAMs] Byte Description 0 CRC range, EEPROM bytes, bytes used 1 SPD revision 2 DRAM device type 3 Module type (form factor) ...

Page 8

... Module part number 146 Module die revision 147 Module PCB revision 148-149 DRAM device manufacturer ID 150-175 Manufacturer reserved 176-255 Customer reserved Note1: NT1GC64BH8A1PS-BE -> 4E543147433634424838413150532D424520 NT1GC64BH8A1PS-CG -> 4E543147433634424838413150532D434720 REV 1.3 06/2009 SPD Entry Value -BE -CG ASCII values ASCII values Undefined Undefined Undefined Undefined Nanya Technology ...

Page 9

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Serial Presence Detect (Part [2GB – 2 Ranks, 128Mx8 DDR3 SDRAMs] Byte Description 0 CRC range, EEPROM bytes, bytes used 1 SPD revision 2 DRAM device type 3 Module type (form factor) ...

Page 10

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Serial Presence Detect (Part [2GB – 2 Ranks, 128Mx8 DDR3 SDRAMs] Byte Description 128-145 Module part number 146 Module die revision 147 Module PCB revision 148-149 DRAM device manufacturer ID ...

Page 11

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Environmental Requirements Symbol Operating Temperature (ambient) T OPR Storage Temperature T STG Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied ...

Page 12

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Single-Ended AC and DC Input Levels for Command and Address Symbol Parameter VIH.CA(DC) DC Input Logic High VIL.CA(DC) DC Input Logic Low VIH.CA(AC) AC Input Logic High VIL.CA(AC) AC Input Logic Low VIH.CA(AC150) AC Input Logic High VIL ...

Page 13

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Operating, Standby, and Refresh Currents = 1.5V ± 0.075V [1GB – 2 Rank, 64Mx16 DDR3 SDRAMs ° ° CASE DDQ DD Symbol Operating One Bank Active-Precharge Current IDD0 Operating One Bank Active-Read-Precharge Current ...

Page 14

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Standard Speed Bins Speed Bin CL – tRCD - tRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ...

Page 15

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module Symbol Parameter Clock Timing tCK(DLL_OF Minimum Clock Cycle Time (DLL off mode) tCK(avg) Average Clock Period(Refer to "Standard Speed tCH(avg) Average high pulse width ...

Page 16

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Symbol Parameter Command and Address Timing tDLLK DLL Locking time Internal READ command to PRECHARGE tRTP Command delay Delay from start of internal write transaction to tWTR internal read command tWR ...

Page 17

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Symbol Parameter Timing of WR command to Power Down entry tWRPDEN (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry tWRAPDEN (BL8OTF, BL8MRS, BC4OTF) Timing of WR command to Power Down entry ...

Page 18

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Package Dimensions – [1GB 2 Ranks, 64Mx16 DDR3 SDRAMs] 2.0 (0.079) 1 21.0 (0.827) 1.5 (0.059) Detail A Units: Millimeters (Inches) Note: Device position and scale are only for reference. REV 1.3 06/2009 67.60 +/- 0.15 (2.661 +/- 0.006) 63 ...

Page 19

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Package Dimensions – [2GB 2 Ranks, 128Mx8 DDR3 SDRAMs] 2.0 (0.079) 1 21.0 (0.827) 1.5 (0.059) Detail A Units: Millimeters (Inches) Note: Device position and scale are only for reference. REV 1.3 06/2009 67.60 +/- 0.15 (2.661 +/- 0.006) 63 ...

Page 20

... NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Revision Log Rev Date 0.1 05/2008 Preliminary Release 1.0 07/2008 Official Release 1.1 09/2008 Revise SPD from Rev0.8 to Rev1.0 1.2 05/2009 Modify IDDx current 1GB & 2GB 1066/1333MHz 1.3 06/2009 IDD and SPD update ...

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