mt48h8m16lf Micron Semiconductor Products, mt48h8m16lf Datasheet - Page 15
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mt48h8m16lf
Manufacturer Part Number
mt48h8m16lf
Description
128mb 8 Meg X 16, 4 Meg X 32 Mobile Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT48H8M16LF.pdf
(74 pages)
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Table 6:
Table 7:
Table 8:
PDF: 09005aef832ff1ea / Source: 09005aef832ff1ac
128mb_mobile_sdram_y35m__2.fm - Rev. B 6/08 EN
Parameter
Input capacitance: CLK
Input capacitance: All other input-only balls
Input/output capacitance: DQs
Parameter/Condition
Operating current:
Active mode; Burst = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Standby current:
Non-power-down mode; All banks idle; CKE = HIGH
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active; No
accesses in progress
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
met; No accesses in progress
Operating current:
Burst mode; READ or WRITE; All banks active, half DQs toggling
every cycle
Auto refresh current
CKE = HIGH; CS# = HIGH
Deep power-down
Parameter/Condition
Operating current:
Active mode; Burst = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Standby current:
Non-power-down mode; All banks idle; CKE = HIGH
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active; No accesses in
progress
Capacitance
Notes apply to all parameters and conditions
I
Note 1 applies to all parameters and conditions; notes appear on page 16; V
I
Note 1 applies to all parameters; notes appear on page 16; V
DD
DD
Specifications and Conditions (x16)
Specifications and Conditions (x32)
Notes:
1. This parameter is sampled. V
f = 1 MHz.
t
t
RC =
RC =
t
t
t
t
RC (MIN)
RFC =
RFC = 7.8125µs
RC (MIN)
t
RFC (MIN)
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
15
DD
t
RCD
, V
DD
Symbol
Q = +1.8V; T
C
C
C
Symbol
IO
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I1
I2
I
I
I
I
DD
DD
I
DD
DD
I
I
I
DD
DD
DD
DD
I
Symbol
ZZ
I
2N
3N
I
I
2P
3P
DD
DD
1
4
5
6
I
DD
DD
DD
/V
2N
2P
3P
1
DD
A
= 25°C; ball under test biased at 0.9V,
Q = 1.70–1.95V
Min
1.5
1.5
200
3
50
15
20
80
90
10
-6
3
5
200
70
15
-6
3
Max
Electrical Specifications
DD
Max
/V
DD
200
-75
©2008 Micron Technology, Inc. All rights reserved.
40
12
15
70
85
10
3
3
200
-75
55
12
Q = 1.70–1.95V
3
Max
4.0
4.0
5.0
Unit
mA
mA
mA
mA
mA
mA
mA
µA
µA
Unit
mA
mA
mA
µA
Preliminary
Unit
2, 3, 4, 6
2, 3, 4, 7
Notes
pF
pF
pF
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
Notes
2, 3, 4
3, 4, 6
5, 8
5
5