mt47h256m8thn-3 Micron Semiconductor Products, mt47h256m8thn-3 Datasheet - Page 8

• Manufacturer Part Number: mt47h256m8thn-3
• Description: 2gb X4, X8 Twindie Ddr2 Sdram Functionality
• Manufacturer: Micron Semiconductor Products

Table 5:
Table 6:
Figure 4:
PDF: 09005aef8266acfe/Source: 09005aef8266ac6e
MT47H512M4_32M_16M_twindie.fm - Rev. B 1/08 EN
shrink
target
Rev
Last
Die
E
Symbol
T
T
STG
C
Package
63-ball
63-ball
Temperature Limits
Thermal Impedance
Temperature Test Point Location
Parameter
Storage temperature
Operating temperature – commercial
Notes:
Notes:
Substrate
2-layer
4-layer
2-layer
4-layer
1. Maximum storage case temperature; T
2. Maximum operating case temperature; T
3. Device functionality is not guaranteed if the device exceeds maximum T
1. Thermal resistance data is based on a number of samples from multiple lots and should be
2. This is an estimate; simulated number and actual results may vary.
Test point
shown in Figure 4. This case temperature limit is allowed to be exceeded briefly during
package reflow, as noted in technical note
ters,” available on Micron’s Web site.
shown in Figure 4.
viewed as a typical number.
Airflow = 0m/s
θ JA (°C/W)
56.8
42.1
45.9
62
Lmm x Wmm FBGA
Airflow = 1m/s
θ JA (°C/W)
Width (W)
42.3
33.9
46.1
37
8
0.5 (W)
Min
–55
0
Airflow = 2m/s θ JB (°C/W) θ JC (°C/W)
STG
Micron Technology, Inc., reserves the right to change products or specifications without notice.
θ JA (°C/W)
C
0.5 (L)
is measured in the center of the package, as
is measured in the center of the package, as
39.8
33.2
36.5
30.4
TN-00-15: “Recommended Soldering Parame-
2Gb: x4, x8 TwinDie DDR2 SDRAM
Length (L)
Max
150
85
Electrical Specifications
26.1
28.5
27.9
25.6
©2006 Micron Technology, Inc. All rights reserved
Units
°C
°C
C
3.9
4.3
during operation.
Notes
2, 3
1
Notes
1
2