mt45w8mw16bgx Micron Semiconductor Products, mt45w8mw16bgx Datasheet - Page 21

• Manufacturer Part Number: mt45w8mw16bgx
• Description: 128mb 8 Meg X 16 Async/page/burst Cellularram 1.5 Async/ Page/burst Cellularram 1.5 Memory
• Manufacturer: Micron Semiconductor Products

Figure 15:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
(except A[19:18])
A[19:18]
DQ[15:0]
LB#/UB#
A[22:0]
ADV#
WAIT
WE#
Register READ, Synchronous Mode Followed by READ ARRAY Operation
OE#
CLK
CRE
CE#
2
Notes:
Latch Control Register Value
High-Z
1. Non-default BCR settings for synchronous mode register READ followed by READ ARRAY
2. A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR.
3. CE# must remain LOW to complete a burst-of-one READ. WAIT must be monitored—addi-
t CSP
t CEW
t SP
t SP
t SP
t SP
operation: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.
tional WAIT cycles caused by refresh collisions require a corresponding number of addi-
tional CE# LOW cycles.
t HD
t HD
t HD
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
t ABA
Latch Control Register Address
t OLZ
t BOE
t ACLK
21
Valid
CR
t KOH
t HD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
t CBPH 3
t HZ
t OHZ
High-Z
Address
Address
Don’t Care
©2004 Micron Technology, Inc. All rights reserved.
Undefined
Valid
Data