mt45w1mw16pdga Micron Semiconductor Products, mt45w1mw16pdga Datasheet - Page 21

• Manufacturer Part Number: mt45w1mw16pdga
• Description: 16mb 1 Meg X 16 Async/page Cellularram 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Table 7:
Table 8:
Figure 14:
Figure 15:
PDF: 09005aef81cadc83/Source:09005aef81c6edb4
16mb_asyncpage_cr1_0_p23z_2.fm - Rev. F 4/08 EN
Description
Description
Deep power-down
Input capacitance
Input/output capacitance (DQ)
Deep Power-Down Specifications and Conditions
Capacitance Specifications and Conditions
AC Input/Output Reference Waveform
Output Load Circuit
Notes: 1. These parameters are verified in device characterization and are not 100 percent tested.
Notes: 1. AC test inputs are driven at V
Input
2. Input timing begins at V
3. Output timing ends at V
DUT
V
V
CC
times (10% to 90%) < 1.6ns.
the input test point may not be shown to scale.
SS
1
Q
Q
T
C
= +25ºC; f = 1 MHz;
V
Conditions
CC
Test Point
V
/2
IN
2
16Mb: 1 Meg x 16 Async/Page CellularRAM 1.0 Memory
V
= 0V
IN
30pF
= V
50
Conditions
CC
CR[4] = 0
ZZ# = 0V
Q or 0V; +25°C
CC
CC
/2. Due to the possibility of a difference between V
Q/2.
21
VccQ/2
CC
Symbol
Q for a logic 1 and V
Test Points
C
C
IN
IO
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
2.0
3.0
Symbol
I
ZZ
SS
Q for a logic 0. Input rise and fall
Electrical Characteristics
Max
V
6.5
6.5
CC
Q/2
©2005 Micron Technology, Inc. All rights reserved.
3
TYP
Output
10
Units
pF
pF
CC
and V
Units
Notes
µA
1
1
CC
Q,