tc51whm516axgn70 TOSHIBA Semiconductor CORPORATION, tc51whm516axgn70 Datasheet - Page 2
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tc51whm516axgn70
Manufacturer Part Number
tc51whm516axgn70
Description
Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos, 2,097,152-word By 16-bit Cmos Pseudo Static Ram
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TC51WHM516AXGN70.pdf
(11 pages)
BLOCK DIAGRAM
OPERATION MODE
Read(Word)
Read(Lower Byte)
Read(Upper Byte)
Write(Word)
Write(Lower Byte)
Write(Upper Byte)
Outputs Disabled
Standby
Deep Power-down Standby
Notes: L = Low-level Input(V
I/O10
I/O12
I/O13
I/O14
I/O15
I/O16
I/O11
CE2
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
CE1
WE
OE
UB
LB
MODE
CONTROL
REFRESH
IL
), H = High-level Input(V
CE1
H
H
L
L
L
L
L
L
L
A10
A12
A13
A14
A15
A16
A17
A18
A19
A20
A11
A9
CONTROL SIGNAL
CE2
CE
H
H
H
H
H
H
H
H
L
GENERATOR
COUNTER
REFRESH
ADDRESS
CE
OE
H
L
L
L
X
X
X
X
X
WE
H
H
H
H
L
L
L
X
X
IH
), X = V
A0 A1 A2 A3 A4 A5
LB
MEMORY CELL ARRAY
H
H
X
X
X
L
L
L
L
COLUMN ADDRESS
COLUMN ADDRESS
4,096 × 512 × 16
IH
SENSE AMP
(33,554,432)
DECODER
UB
BUFFER
H
H
X
X
X
or V
L
L
L
L
IL
, High-Z = High-impedance
Add
X
X
X
X
X
X
X
X
X
A6
A7 A8
I/O1 to I/O8
TC51WHM516AXGN65,70
High-Z
Invalid
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
IN
IN
CE
I/O9 to I/O16
High-Z
Invalid
High-Z
High-Z
High-Z
D
D
V
GND
D
D
2002-03-14 2/11
OUT
OUT
DD
IN
IN
POWER
I
I
I
I
I
I
I
I
I
DDSD
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDS