tc51whm516axgn70 TOSHIBA Semiconductor CORPORATION, tc51whm516axgn70 Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_sml.jpg)
tc51whm516axgn70
Manufacturer Part Number
tc51whm516axgn70
Description
Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos, 2,097,152-word By 16-bit Cmos Pseudo Static Ram
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TC51WHM516AXGN70.pdf
(11 pages)
Deep Power-down Timing
Power-on Timing
Provisions of Address Skew
Read
If multiple invalid address cycles shorter than t
t
Write
If multiple invalid address cycles shorter than t
t
RC
WC
min must be needed during 10µs.
min with t
Address
Address
CE2
V
CE2
CE1
CE1
CE1
WE
CE1
WE
DD
WP
min must be needed during 10µs.
V
DD
min
t
CS
t
CHP
t
CHC
WC
RC
min sustain over 10µs, as least one valid address cycle over
min sustain over 10µs, as least one valid address cycle over
over 10µs
over 10µs
t
DPD
t
CH
TC51WHM516AXGN65,70
t
t
t
WC
WP
RC
min
min
min
t
CH
2002-03-14 8/11