tda8594sd-n1 NXP Semiconductors, tda8594sd-n1 Datasheet - Page 27

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tda8594sd-n1

Manufacturer Part Number
tda8594sd-n1
Description
Tda8594 I?c-bus Controlled 4 X 50 W Power Amplifier
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
10. Thermal characteristics
11. Characteristics
Table 17.
Refer to
Tested at T
TDA8594_2
Product data sheet
Symbol
Supply voltage behavior
V
I
I
V
V
V
V
V
V
R
q
stb
V
P
O
P(low)(mute)
th(ovp)
hr
POR
O(offset)
L(tol)
P(low)(mute)
Figure 29
amb
Characteristics
= 25 C; guaranteed for T
Parameter
supply voltage
quiescent current
standby current
output voltage
low supply voltage mute
low supply voltage mute
hysteresis
overvoltage protection
threshold voltage
headroom voltage
power-on reset voltage
output offset voltage
load resistance tolerance
at V
P
= V
Table 15.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 16.
Symbol
P
V
Symbol
R
R
tot
esd
th(j-c)
th(j-a)
P1
= V
P2
= 14.4 V; R
Limiting values
Thermal characteristics
Parameter
total power dissipation
electrostatic discharge
voltage
Parameter
thermal resistance from junction
to case
thermal resistance from junction
to ambient
amb
= 40 C to +105 C.
L
Rev. 02 — 11 December 2007
Conditions
R
R
no load
V
with rising supply voltage
with falling supply voltage
when headroom protection is
activated; see
see
amplifier on
amplifier mute
line driver mode
V
V
= 4 ; f = 1 kHz; R
STB
P
P
L
L
= 4
= 2
Figure 9
…continued
18 V
16 V
= 0.4 V
Figure 7
Conditions
T
human body model;
C = 100 pF;
R
machine model;
C = 200 pF; R
L
s
case
s
= 0.75 H
= 1.5 k
S
= 70 C
= 0 ; normal mode; unless otherwise specified.
I
2
C-bus controlled 4
Conditions
in free air
s
= 10 ;
[1]
Min
8
8
-
-
6.7
6.9
6.3
0.1
18
1.1
4.1
3.2
1.6
95
25
40
Min
-
-
-
Typ
14.4
14.4
270
4
7
7.5
6.8
0.7
20
1.6
5.0
0
0
0
4
2
50 W power amplifier
Typ
1
40
TDA8594
© NXP B.V. 2007. All rights reserved.
Max
80
2000
200
Max
18
16
400
15
7.2
8
7.4
1
22
2.0
5.8
+95
+25
+40
-
-
Unit
K/W
K/W
Unit
W
V
V
Unit
V
V
mA
V
V
V
V
V
V
V
mV
mV
mV
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A

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