clc5612 National Semiconductor Corporation, clc5612 Datasheet - Page 3

• Manufacturer Part Number: clc5612
• Description: Dual, High Output, Programmable Gain Buffer
• Manufacturer: National Semiconductor Corporation

Ambient Temperature
Frequency Domain Response
Time Domain Response
Distortion And Noise Response
Static, DC Performance
Symbol
(A
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
Supply Voltage (V
+5 Electrical Characteristics
V
= +2, R
-3dB Bandwidth
−0.1dB Bandwidth
Gain Peaking
Gain Rolloff
Linear Phase Deviation
Differential Gain
Differential Phase
Rise and Fall Time
Settling Time to 0.05%
Overshoot
Slew Rate
2nd Harmonic Distortion
3rd Harmonic Distortion
Equivalent Input Noise
Crosstalk (Input Referred)
Input Offset Voltage (Note 3)
Input Bias Current
(Non-Inverting)(Note 3)
Gain Accuracy (Note 3)
Power Supply Rejection Ratio
L
Non-Inverting Current (i
Inverting Current (i
Voltage (e
Average Drift
Average Drift
Internal Resistors (R
= 100 , V
CC
CC
)
- V
ni
Parameter
S
)
EE
+5V
)
1
, V
bi
)
CM
f
, R
bn
g
= V
)
)
EE
+ (V
(Note 1)
S
/2), R
CLC5612IN/IM
V
V
V
NTSC, R
−1V
NTSC, R
−1V
2V Step
1V Step
2V Step
2V Step
2V
2V
2V
2V
2V
2V
DC
<
<
<
>
>
>
>
O
O
O
200MHz, V
30MHz, V
30MHz, V
1MHz
1MHz
1MHz
10MHz, 1V
PP
PP
PP
PP
PP
PP
= 0.5V
= 2.0V
= 0.5V
L
,1MHz
,1MHz; R
,5MHz
,1MHz
,1MHz; R
,5MHz
+14V
tied to V
Conditions
±
7V
L
L
PP
PP
PP
= 150
= 150
O
O
O
PP
3
= 0.5V
= 0.5V
L
L
cm
= 0.5V
= 1K
= 1k
, unless specified)
Output Current (see (Note 4))
Common-Mode Input Voltage
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering 10 sec)
to
to
PP
PP
PP
+25˚C
1000
±
0.09
0.14
Typ
185
−74
−79
−65
−86
−81
−60
−80
0.2
0.1
5.5
3.4
6.3
8.7
75
62
18
20
80
25
48
0.3
0
3
8
3
+25˚C
±
±
11.3
150
−70
−77
−58
−82
−79
−55
0.5
0.9
0.4
9.0
6.5
4.4
8.2
20%
50
57
13
28
30
14
45
1.5
–
–
-
-
-
Min/Max Ratings
(Note 2)
±
70˚C
±
12.4
0 to
130
−67
−72
−58
−79
−76
−53
0.9
1.0
0.5
9.7
4.9
9.0
26%
50
54
11
45
14
35
18
43
2.0
–
–
-
-
-
−40 to
−65˚C to +150˚C
±
85˚C
±
10.5
12.4
120
−67
−72
−58
−79
−76
−53
1.2
1.0
0.5
4.9
9.0
30%
50
52
11
70
14
35
18
43
2.0
–
–
-
-
-
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V
EE
+150˚C
+300˚C
140mA
nV/
pA/
pA/
to V
Units
µV/˚C
nA/˚C
MHz
MHz
MHz
V/µs
deg
deg
dBc
dBc
dBc
dBc
dBc
dBc
mV
dB
dB
dB
µA
dB
ns
ns
%
%
%
CC