hsdl-3209 ETC-unknow, hsdl-3209 Datasheet - Page 4

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hsdl-3209

Manufacturer Part Number
hsdl-3209
Description
Irda Data Compliant Low Power 115.2 Kbit/s Infrared Transceiver
Manufacturer
ETC-unknow
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
hsdl-3209-021
Manufacturer:
AVAGO
Quantity:
2 385
Notes:
4. For in-band signals from 9.6kbit/s to 115.2 kbit/s, where 9µW/cm
5. Latency time is defined as the time from the last TxD light output pulse until the receiver has recovered full sensitivity
6. Receiver wake up time is measured from Vcc power on or SD pin high to low transition to a valid RXD output.
7. The maximum optical PW is the maximum time the LED remains on when the TXD is constantly high. This is to prevent long turn on time of the LED
8. For V
4
Electrical & Optical Specifications
Specifications (Min. & Max. values) hold over the recommended operating conditions unless otherwise noted.
Unspecified test conditions may be anywhere in their operating range. All typical values (Typ.) are at 25°C with Vcc set to
3.0V and IOVcc set to 1.8V unless otherwise noted.
Parameter
Receiver
Peak Sensitivity Wavelength
RXD Output Voltage
RXD Pulse Width (SIR)
RXD Rise and Fall Times
Receiver Latency Time
Receiver Wake Up Time
Radiant Intensity
Peak Wavelength
Spectral Line Half Width
LED Current
Optical Pulse Width (SIR)
Maximum Optical PW
LED Anode On State Voltage
Supply Current
Viewing Angle
Transmitter
Viewing Angle
TXD Input Current
TXD Rise and fall Time (Optical)
Transceiver
for eye safety protection.
cc
> 3V and IOV
cc
< 1.8V, I
[7]
[5]
[4]
[6
]
CC1
Logic High
Logic Low
High
Low
On
Idle
Shutdown
Shutdown
can exceed 15uA.
[8]
IE
I
I
I
I
I
I
Symbol
λp
V
V
t
t
t
t
λp
∆λ½
t
t
tr, tf
V
H
L
VLED
VLED
CC1
CC2
PW
r
L
W
PW
PW
, t
OH
OL
ON(LEDA)
H
½
½
(max.)
f
(SIR)
(SIR)
2
≤ EI ≤ 500mW/cm
Min.
IOVcc-0.2
1
1.4
30
0
4
30
-10
100
14
1.6
1.55
100
880
60
50
875
35
0.02
-0.02
50
Typ.
2
.
Max.
IOVcc
0.4
60
10
10
1.8
100
1.8
1
4.0
200
600
Units
°
nm
µs
ns
µs
µs
mW/sr I
°
nm
nm
µA
µA
mA
nA
µs
µs
ns
µA
µA
V
V
V
I
EI ≤ 1.0 µW/cm2
I
EI ≥ 8.1 µW/cm2
θ
CL =9 pF
θ
0 ≤ V
115.2 kbit/s
I
Conditions
T
V
V
V
t
tpw(TXD) = 1.6 µs
V
V
V
OH
OL
LEDA
LEDA
PW
½
½
A
I
I
I(SD)
I(TXD)
SD
I(TXD)
(TXD) ≥ V
=25 °C, IOVcc = 1.8V
≥ V
= 200 µA,
= -200 µA,
≤ 15°, CL =9 pF
≤ 15°, V
(TXD) = 1.6 µs at
= 50 mA,
=50mA,
≥ V
≥ V
I
≥ V
≤ V
IH
≤ V
IH
IH
, T
IH
IL
IL
, EI = 0
TXD
A
IH
=25°C
≥ V
IH

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