tda5153x NXP Semiconductors, tda5153x Datasheet - Page 20

• Manufacturer Part Number: tda5153x
• Description: Pre-amplifier Hard Disk Drive With Mr-read/inductive Write Heads
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Jul 02
I
V
Z
Write characteristics
I
V
R
t
t
t
Switching characteristics
f
t
t
t
----------------
o(max)(dif)
WR
r
as
pd
SCLK
rec(W-R)
sw(R)
off(R)
SYMBOL
, t
o(n)(dif)
I
cs
V
o(cm)
s(max)(p-p)
Pre-amplifier for Hard Disk Drive (HDD)
with MR-read/inductive write heads
o(dif)
V
WR
V
o(cm)
f
ocm
CC
maximum differential output
current
common mode output voltage in
read mode
common mode DC supply rejection
in read mode
differential output impedance in
other modes (write, standby, sleep)
write current adjust range (in the
write drivers)
tolerance (excluding R
maximum voltage swing
(peak-to-peak value)
differential output resistance
write current rise/fall time without
flip-flop (10% to 90%); note 8
write current asymmetry; note 9
propagation delay 50% of
(WDIx/WDIy) to 50% of (Wx, Wy)
channel separation
serial interface clock rate
output common mode DC voltage
change from Read to Write modes
write to read recovery time
(AC and DC settling); note 10
head switching (in read mode),
standby to read active and MR
current change recovery time;
(AC and DC settling); note 11
read amplifier off time
I
----------------------------------- -
WR
I
RW (PR)
–
I
RW (PR)
PARAMETER
ext
);
RDx, RDy
R
I
V
V
V
R
f = 20 MHz
percentage of t
(t
write head short circuited; data
flip-flop by passed
unselected head
I
from 50% of the rising edge of
R/W to steady state read-back
signal: AC and DC settling at
90% (without load at
RDx
from falling edge of SEN to
steady state read-back signal;
(without load at RDx
from falling edge of R/W to
read head inactive
WR(PR)
MR
r
CC(WD)
CC(WD)
CC(WD)
ext
h
, t
read amplifier OFF: d5 = 0
read amplifier ON: d5 = 1
= 10 ; I
f
= 10 mA; I
= 10 k ; 1 mA steps
and logic asymmetry)
20
RDy)
= 35 mA
CONDITIONS
= 5 V
= 8 V (differential)
= 8 V; L
WR
WR
r
= 35 mA;
/t
h
f
= 35 mA
= 150 nH,
RDy)
1.0
20
MIN.
4
1.5
20
50
35
200
45
200
3
100
3
TYP.
7
Preliminary specification
2.0
51
8
13
5
5
25
4.5
150
4.5
50
MAX.
TDA5153
1.8
mA
V
dB
k
mA
%
V
V
ns
%
ns
dB
MHz
mV
ns
s
s
s
UNIT