cbtu4411 NXP Semiconductors, cbtu4411 Datasheet - Page 7

• Manufacturer Part Number: cbtu4411
• Description: Cbtu4411 11-bit Ddr2 Sdram Mux/bus Switch With 12 Ohm On-resistance
• Manufacturer: NXP Semiconductors

1. All typical values are at V
2. Measured by the current between the Host and the DIMM terminals at the indicated voltages on each side of the switch.
1. This parameter is not production tested.
2. Skew is not production tested.
Philips Semiconductors
DC ELECTRICAL CHARACTERISTICS
NOTES:
AC CHARACTERISTICS
NOTES:
2006 Sep 22
r
r
r
SYMBOL
SYMBOL
t
t
pd, channel 10
pu, channel 10
V
PZH
PHZ
11-bit DDR2 SDRAM mux/bus switch
with 12
SYMBOL
DP10strobe
t
t
V
t
osk
esk
pd
C
r
r
, t
, t
V
TTSn
I
I
C
r
r
on
DD
TT
I
r
pd
on
IK
PZL
PLZ
I
in
on
2
2
Propagation delay
Enable time
Disable time
Output skew
Any output to any output, Waveform 5
(see note 2)
Edge skew
Difference of rising edge propagation delay
to falling edge propagation delay,
Waveform 4 (see note 2)
Input clamp voltage
Sn inputs termination voltage
Channel 10 DIMM port pull-up
voltage
Input leakage current
Quiescent supply current
Quiescent supply current
Sn pin capacitance
Switch on capacitance
On resistance
On-resistance
Variation in r
voltage
voltage
Pull-down resistance
Pull down resistor channel 10
Pull-down resistor, channel 10
Pull-up resistor, channel 10
Sn-input termination resistor
value. Thevenin equivalent
(see Figure 4).
on-resistance
PARAMETER
DD
on
PARAMETER
PARAMETER
over channel
1
= 1.8 V, T
(see Figures 5 and 7)
amb
= 25 C
V
Sn inputs = open circuit; TERM = HIGH
EN = LOW; V
STREN = HIGH; unselected DIMM port
V
V
S = V
TERM
TERM = LOW
V
EN = LOW
V
EN = HIGH
V
V
V
V
EN = LOW; V
STREN
STREN = LOW; selected DIMM port
V
V
V
EN = HIGH; V
EN = HIGH; V
STREN = LOW
EN = HIGH; V
STREN = HIGH
EN = HIGH; V
STREN = HIGH
Input voltage sweep 0 < V
TERM = HIGH
DD
DD
DD
DD
DD
I
in
DD
DD
HP
HPn
xDPn
= 1.8 V or 0
= 0.9 V
= 1.7 V; I
= 1.8 V; V
= 1.8 V V
= 1.8 V; I
= 1.8 V; I
= 1.8 V; V
= 1.8 V; V
DD
= V
= V
= V
; V
LOW
DD
DD
DD
LOW selected DIMM port
BIAS
/2 + 250 mV and
/2 + 250 mV and
FROM (INPUT)
FROM (INPUT)
TEST CONDITIONS
/2 – 250 mV
bias
bias
HPx or xDPx
I
O
O
BIAS
BIAS
BIAS
BIAS
A
A
I
I
= –18 mA
= V
= V
= V
= 0, V
= 0, V
= V
= V
= 0.54 V; V
= 0.54 V; V
Sn
Sn
= 0.54 V; V
= 0.54 V; V
= 0.54 V; V
= 0.54 V; V
DD
DD
DD
REF
REF
I
I
;
7
= V
= V
or GND;
or GND
; V
; V
in(S
B
B
DD
DD
= V
= V
DD
DD
) < V
or GND,
or GND,
DD
DD
DD
DD
REF
REF
TO (OUTPUT)
TO (OUTPUT)
= 1.8 V;
= 1.8 V;
xDPx or HPx
HPx or xDPx
HPx or xDPx
= 1.8 V
= 1.8 V;
= 1.8 V;
= 1.8 V;
DD
DIMM port
Host port
;
S0, S1
250 mV
500 mV
0.5
– 40 mV
V
DD
0.25
Min
280
280
780
430
0.75
0.75
55
Min
—
—
—
—
—
—
—
—
7
7
–
—
—
—
/2 +
V
DD
T
V
amb
DD
= +1.8 V
0.75
= 0 C to +85 C
0.5
LIMITS
Typ
1120
Typ
400
400
622
50
25
25
1.8
—
—
12
12
80
—
—
—
—
6
5
3
4
V
1
V
DD
DD
0.1 V
CBTU4411
0.75
0.5
Product data sheet
+ 40 mV
Max
1.75
1.75
100
+ 0.25
30
30
1460
Max
–1.2
100
520
520
810
105
2.5
100
100
100
—
17
17
9
6
V
V
DD
DD
UNIT
UNIT
UNIT
ps
ns
ns
ps
ps
mA
pF
pF
V
V
V
A
A
A
A