nx3l1t3157 NXP Semiconductors, nx3l1t3157 Datasheet - Page 12

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nx3l1t3157

Manufacturer Part Number
nx3l1t3157
Description
Nx3l1t3157 Low-ohmic, Single-pole, Double-throw Switch
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
Table 12.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
specified); t
[1]
NX3L1T3157_1
Product data sheet
Symbol Parameter
THD
f
V
Q
( 3dB)
iso
ct
inj
f
i
is biased at 0.5V
total harmonic
distortion
response
isolation (OFF-state)
crosstalk voltage
charge injection
r
3 dB frequency
Additional dynamic characteristics
= t
f
12.2 Additional dynamic characteristics
2.5 ns.
CC
.
Conditions
f
R
f
between digital inputs and switch;
f
f
R
i
i
i
i
= 20 Hz to 20 kHz; R
L
= 100 kHz; R
= 1 MHz; C
= 1 MHz; C
gen
V
V
V
V
V
V
V
V
V
V
V
= 50 ; see
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
= 0 ; see
= 1.4 V; V
= 1.65 V; V
= 2.3 V; V
= 2.7 V; V
= 1.4 V to 3.6 V
= 1.4 V to 3.6 V
= 1.4 V to 3.6 V
= 1.5 V
= 1.8 V
= 2.5 V
= 3.3 V
L
L
Rev. 01 — 3 January 2008
= 50 pF; R
= 0.1 nF; R
L
Figure 17
Figure 20
= 50 ; see
I
I
I
= 1 V (p-p)
= 1.5 V (p-p)
= 2 V (p-p)
I
= 1.2 V (p-p)
L
= 32 ; see
L
L
= 50 ; see
= 1 M ; V
Figure 18
Low-ohmic, single-pole, double-throw switch
Figure 16
gen
Figure 19
= 0 V;
I
= GND or V
[1]
[1]
[1]
NX3L1T3157
Min
-
-
-
-
-
-
-
-
-
-
-
CC
25 C
0.015
0.024
0.15
0.10
0.21
© NXP B.V. 2008. All rights reserved.
Typ
60
(unless otherwise
90
3
4
6
9
Max
-
-
-
-
-
-
-
-
-
-
-
12 of 19
MHz
Unit
dB
pC
pC
pC
pC
%
%
%
%
V

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