nx3l1t3157 NXP Semiconductors, nx3l1t3157 Datasheet - Page 6

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nx3l1t3157

Manufacturer Part Number
nx3l1t3157
Description
Nx3l1t3157 Low-ohmic, Single-pole, Double-throw Switch
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
Table 8.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see
NX3L1T3157_1
Product data sheet
Symbol
R
Fig 4. Test circuit for measuring OFF-state leakage current
Fig 5. Test circuit for measuring ON-state leakage current
ON(peak)
V
V
I
I
Parameter
ON resistance (peak)
= 0.3 V or V
= 0.3 V or V
ON resistance
11.1 Test circuits
11.2 ON resistance
CC
CC
0.3 V; V
0.3 V; V
V
IL
V I
or V
V
O
O
IL
IH
Conditions
V
I
see
= V
= V
V I
SW
or V
I
V
V
V
V
= GND to V
CC
CC
CC
CC
CC
CC
IH
I
= 100 mA;
Figure 6
S
= 1.4 V
= 1.65 V
= 2.3 V
= 2.7 V
S
Z
0.3 V or 0.3 V.
0.3 V or 0.3 V.
V
S
Z
Rev. 01 — 3 January 2008
CC
GND
CC
V
Y0
Y1
CC
;
GND
Y0
Y1
1
2
1
2
switch
switch
I
S
Low-ohmic, single-pole, double-throw switch
Min
-
-
-
-
V O
40 C to +85 C
switch
V O
Typ
1
2
0.55
1.6
1.0
0.5
switch
001aac359
[1]
1
2
V
V
S
001aac358
IH
IL
V
Max
0.75
V
3.7
1.6
0.8
S
IH
IL
NX3L1T3157
40 C to +125 C Unit
Min
-
-
-
-
Figure 7
© NXP B.V. 2008. All rights reserved.
Max
4.1
1.7
0.9
0.9
to
Figure
6 of 19
12.

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