tea1521t-n2 NXP Semiconductors, tea1521t-n2 Datasheet - Page 11

• Manufacturer Part Number: tea1521t-n2
• Description: Tea152x Family Smps Ics For Low-power Systems
• Manufacturer: NXP Semiconductors

Philips Semiconductors
TEA152X_FAM_2
Product data sheet
Table 6:
T
positive when flowing into the IC; unless otherwise specified.
Symbol
V
Valley switching
dV/dt
f
t
Current and short-circuit winding protection
V
t
V
t
FET output stage
I
V
R
t
Temperature protection
T
T
valley
d(valley-swon)
d(prop)
leb
L(drain)
drain(f)
amb
prot(max)
prot(hys)
REG(clamp)
source(max)
swp
(BR)drain
DSon
= 25 C; no overtemperature; all voltages are measured with respect to ground; currents are
valley
Characteristics
Parameter
clamping voltage at pin
REG
dV/dt for valley recognition
ringing frequency for valley
switching
delay from valley
recognition to switch-on
maximum source voltage
delay from detecting
V
short circuit winding
protection voltage
leading edge blanking time
drain leakage current
drain breakdown voltage
drain-source on-state
resistance
drain fall time
maximum threshold
temperature
hysteresis temperature
source(max)
TEA1520
TEA1521
TEA1522
TEA1523
Rev. 02 — 25 January 2006
to switch-off
…continued
Conditions
I
N
dV/dt = 0.1 V/ s
dV/dt = 0.5 V/ s
dV/dt = 0.5 V/ s
V
T
I
I
I
I
V
no external capacitor
at drain
REG
source
source
source
source
j
drain
i
T
T
T
T
T
T
T
T
> 0 C
= 300 V;
j
j
j
j
j
j
j
j
V
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 6 mA
o
= 650 V
= 0.06 A
= 0.125 A
= 0.25 A
= 0.50 A
= 100 V
SMPS ICs for low-power systems
TEA152x family
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
200
-
0.47
-
0.7
250
-
650
-
-
-
-
-
-
-
-
-
150
-
102
Typ
-
-
550
150
0.50
160
0.75
350
-
-
48
68
24
34
12
17
6.5
9.0
75
160
2
Max
7.5
+102
800
-
0.53
185
0.8
450
125
-
55.2
78.2
27.6
39.1
13.8
19.6
7.5
10.0
-
170
-
11 of 20
Unit
V
V/ s
kHz
ns
V
ns
V
ns
V
ns
C
C
A