tea1206t NXP Semiconductors, tea1206t Datasheet - Page 10

• Manufacturer Part Number: tea1206t
• Description: High Efficiency Dc/dc Converter
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Notes
1. The undervoltage lockout voltage shows wide specification limits since it decreases at increasing temperature. When
2. When V
3. V
4. The current limit is defined by an external resistor R
5. The specified efficiency is valid when using a 330 F output capacitor having an ESR of 0.10
6. If the applied HIGH-level voltage is less than V
2001 Mar 14
Timing
f
f
t
Temperature
T
T
Digital levels
V
V
SYMBOL
sw
sync
res
2
amb
max
lL
IH
High efficiency DC/DC converter
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range.
conducting (100% duty cycle), resulting in V
current limit increases in proportion to the programmed current limiting level.
a 10 H small size inductor (Coilcraft DT1608C-103).
3
is the voltage on pin 3 (UPOUT/DNIN).
I
efficiency in downconversion
configuration
switching frequency
synchronization clock input frequency
response time
ambient temperature
internal cut-off temperature
LOW-level input voltage
on pins 1, 5 and 8
HIGH-level input voltage
is lower than the target output voltage but higher than 2.8 V, the P-type power MOSFET will remain
on pin 1
on pins 5 and 8
PARAMETER
O
following V
3
1 V, the quiescent current (l
V
L1 = 10 H; note 5
PWM mode
from standby to P
note 6
lim
I
I
I
I
I
I
I
= 3.6 V; V
L
L
L
L
L
L
(see Section “Current limiting resistors R
10
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 500 mA
= 1 A; pulsed
CONDITIONS
I
.
O
= 1.8 V;
o(max)
475
9
150
0
V
0.55V
40
3
MIN.
q
) of the device will increase.
0.4
3
83
90
91
87
88
82
560
13
25
+25
175
TYP.
Product specification
(Sprague 595D) and
lim
645
20
+80
200
0.5
V
V
TEA1206T
”). Accuracy of the
MAX.
3
3
+ 0.3 V
+ 0.3 V
%
%
%
%
%
%
kHz
MHz
V
C
C
s
UNIT