tea1206t NXP Semiconductors, tea1206t Datasheet - Page 9

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tea1206t

Manufacturer Part Number
tea1206t
Description
High Efficiency Dc/dc Converter
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
CHARACTERISTICS
T
2001 Mar 14
Voltage levels
U
V
V
V
V
D
V
V
O
V
Current levels
I
I
I
Power MOSFETs
R
Efficiency (see Fig.5)
SYMBOL
amb
q
shdwn
LX
V
I
1
I
O
I(start)
I(uvlo)
I
O
fb
PCONVERSION
OWNCONVERSION
DSon
High efficiency DC/DC converter
UTPUT LOOP
lim
wdw
= 40 to +80 C; all voltages with respect to ground; positive currents flow into the IC; unless otherwise specified.
input voltage
output voltage
start-up input voltage
undervoltage lockout input voltage
input voltage
output voltage
feedback voltage
output voltage window
quiescent current on pin 3 in
downconversion configuration
current in shut-down mode
maximum continuous current on pin 4
current limit deviation
drain-to-source on-state resistance
efficiency in upconversion configuration
upconversion configuration
downconversion configuration
N-type
P-type
; pin U/D = LOW
;
PIN
U/D = HIGH
PARAMETER
I
note 1
note 2
PWM mode
V
I
note 4
V
L1 = 10 H; note 5
L
lim
3
I
< 200 mA
I
I
I
I
I
I
= 3.6 V; V
L
L
L
L
L
L
= 3.6 V; note 3
= 0.5 to 5.0 A;
9
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 500 mA
= 1 A; pulsed
CONDITIONS
O
= 4.6 V;
V
2.80
1.40
1.50
2.80
1.25
1.19
1.5
65
0.08
0.10
17.5
17.5
I(start)
MIN.
1.60
2.10
1.24
2.0
75
2
0.14
0.16
86
93
93
93
93
87
TYP.
Product specification
5.50
5.50
1.85
2.50
5.50
5.50
1.29
3.0
85
10
1.0
+17.5
+17.5
0.20
0.25
TEA1206T
MAX.
V
V
V
V
V
V
V
%
A
%
%
%
%
%
%
%
%
A
A
UNIT

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