74aup1g373gw NXP Semiconductors, 74aup1g373gw Datasheet

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74aup1g373gw

Manufacturer Part Number
74aup1g373gw
Description
Low-power D-type Transparent Latch; 3-state
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
74AUP1G373GW
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. General description
2. Features
The 74AUP1G373 provides the single D-type transparent latch with 3-state output. While
the latch-enable (LE) input is high, the Q output follows the data (D) input. When pin LE is
LOW, the latch stores the information that was present at the D-input one set-up time
preceding the HIGH-to-LOW transition of pin LE. When pin OE is LOW, the contents of
the latch is available at the (Q) output. When pin OE is HIGH, the output goes to the
high-impedance OFF-state. Operation of input pin OE does not affect the state of the
latch.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
This device ensures a very low static and dynamic power consumption across the entire
V
This device is fully specified for partial power-down applications using I
The I
the device when it is powered down.
CC
74AUP1G373
Low-power D-type transparent latch; 3-state
Rev. 03 — 9 January 2008
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
OFF
range from 0.8 V to 3.6 V.
OFF
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114E Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101-C exceeds 1000 V
circuitry provides partial Power-down mode operation
circuitry disables the output, preventing the damaging backflow current through
CC
range from 0.8 V to 3.6 V.
CC
= 0.9 A (maximum)
CC
Product data sheet
OFF
.

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74aup1g373gw Summary of contents

Page 1

Low-power D-type transparent latch; 3-state Rev. 03 — 9 January 2008 1. General description The 74AUP1G373 provides the single D-type transparent latch with 3-state output. While the latch-enable (LE) input is high, the Q output follows the data (D) ...

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... Table 1. Ordering information Type number Package Temperature range Name 74AUP1G373GW +125 C 74AUP1G373GM +125 C 74AUP1G373GF +125 C 4. Marking Table 2. Marking Type number 74AUP1G373GW 74AUP1G373GM 74AUP1G373GF 5. Functional diagram 001aae247 Fig 1. Logic symbol 74AUP1G373_3 Product data sheet Low-power D-type transparent latch ...

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... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP1G373 GND 001aae250 Fig 4. Pin configuration SOT363 (SC-88) 6.2 Pin description Table 3. Pin description Symbol Pin LE 1 GND Functional description [1] Table 4. Function table Operating modes Enable and read register (transparent ...

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... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V input voltage I I output clamping current OK V output voltage O I output current ...

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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF I additional power-off OFF leakage current ...

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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF I additional power-off OFF leakage current ...

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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF I additional power-off OFF leakage current ...

Page 8

... NXP Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation see pd delay see ...

Page 9

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation see pd delay see ...

Page 10

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation see pd delay see ...

Page 11

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation see pd delay see ...

Page 12

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t set-up time D to LE; see su(H) HIGH set-up time D to LE; see ...

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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions C power MHz dissipation output enabled capacitance [1] All typical values are measured at nominal V ...

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... NXP Semiconductors Measurement points are given in Logic levels: V and V are typical output voltage levels that occur with the output load Fig 8. The latch enable input (LE) to output (Q) propagation delays, the latch enable input (LE) pulse width Measurement points are given in Logic levels: V and V are typical output voltage levels that occur with the output load ...

Page 15

... NXP Semiconductors OE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH Measurement points are given in Logic levels: V and V are typical output voltage levels that occur with the output load Fig 10. Turn-on and turn-off times Table 10. Measurement points Supply voltage ...

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... NXP Semiconductors Test data is given in Table 11. Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 11. Load circuitry for switching times Table 11 ...

Page 17

... NXP Semiconductors 13. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 12. Package outline SOT363 (SC-88) 74AUP1G373_3 Product data sheet scale ...

Page 18

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 1.5 mm 0.5 0.04 0.17 1.4 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION ...

Page 19

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 14. Package outline SOT891 (XSON6) ...

Page 20

... NXP Semiconductors 14. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 13. Revision history Document ID Release date 74AUP1G373_3 20080109 • Modifications: Section have changed ...

Page 21

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 22

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 14 Abbreviations ...

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