is43dr16640a-3dbi Integrated Silicon Solution, Inc., is43dr16640a-3dbi Datasheet - Page 22
is43dr16640a-3dbi
Manufacturer Part Number
is43dr16640a-3dbi
Description
1gb X8, X16 Ddr2 Sdram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
1.IS43DR16640A-3DBI.pdf
(28 pages)
IS43DR81280A, IS43/46DR16640A
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00A, 12/11/2009
Input Setup Time (fast
slew rate)
Input Hold Time (fast slew
rate)
Input Pulse Width
Write DQS High Level
Width
Write DQS Low Level
Width
CLK to First Rising Edge of
DQS‐In
Data‐In Setup Time to
DQS‐In (DQ, DM)
Data‐In Hold Time to
DQS‐In (DQ, DM)
DQS falling edge from CLK
rising Setup Time
DQS falling edge from CLK
rising Hold Time
DQ & DM Pulse Width
Read DQS Preamble Time
Read DQS Postamble
Time
Write DQS Preamble
Setup Time
Write DQS Preamble Hold
Time
Write DQS Preamble Time
Write DQS Postamble
Time
Internal Read to
Precharge Command
Delay
Internal Write to Read
Command Delay
Data‐Out to High
Impedance from CK/CK#
DQS/DQS# Low
Impedance from CK/CK#
Parameter
tLZ(DQS)
tWPREH
tWPRES
Symbol
tDQSH
tWPRE
tDIPW
tWPST
tDQSL
tDQSS
tRPRE
tRPST
tWTR
tIPW
tDSH
tDSS
tRTP
tDH
tDS
tHZ
tIH
tIS
0.35
0.35
0.35
0.25
0.35
DDR2‐533C DDR2‐667D DDR2‐800E DDR2‐800D
Min Max Min Max Min Max Min Max Min
250
375
100
225
0.6
0.2
0.2
0.9
0.4
0.4
7.5
7.5
0
‐37C
1.1
0.6
0.6
0.35
0.35
0.35
0.25
0.35
200
275
100
175
0.6
0.2
0.2
0.9
0.4
0.4
7.5
7.5
0
‐3D
Min = tAC(min), Max = tAC(max)
Min = ‐0.25tCK, Max = +0.25tCK
Min = n/a, Max = tAC(max)
1.1
0.6
0.6
0.35
0.35
0.35
0.25
0.35
175
250
125
0.6
0.2
0.2
0.9
0.4
0.4
7.5
7.5
50
0
‐25E
1.1
0.6
0.6
0.35
0.35
0.35
0.25
0.35
175
250
125
0.6
0.2
0.2
0.9
0.4
0.4
7.5
7.5
50
0
‐25D
0.6
0.6
1.1
0.35
0.35
0.35
0.25
0.35
125
200
DDR2‐1066F
0.6
0.2
0.2
0.9
0.4
0.4
7.5
7.5
75
0
0
‐19F
Max
1.1
0.6
0.6
Units
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ps
ps
ps
ps
ns
ns
ns
ns
16,17,
16,17,
Notes
15,17
15,17
22
18
18
10
13
7
7