lh28f016sct-zr Sharp Microelectronics of the Americas, lh28f016sct-zr Datasheet - Page 42

• Manufacturer Part Number: lh28f016sct-zr
• Description: Flash Memory 16mbit 2mbitx8
• Manufacturer: Sharp Microelectronics of the Americas

6.2.8 BLOCK ERASE, BYTE WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE
NOTES:
1. Typical values measured at T
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
4. Block erase, byte write and lock-bit configuration operations with V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV1
EHQV1
WHQV2
EHQV2
WHQV3
EHQV3
WHQV4
EHQV4
WHRH1
EHRH1
WHRH2
EHRH2
WHQV1
EHQV1
WHQV2
EHQV2
WHQV3
EHQV3
WHQV4
EHQV4
WHRH1
EHRH1
WHRH2
EHRH2
Sym.
Sym.
Subject to change based on device characterization.
guaranteed.
Byte Write Time
Block Write Time
Block Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Byte Write Suspend Latency
Time to Read
Erase Suspend Latency
Time to Read
Byte Write Time
Block Write Time
Block Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Byte Write Suspend Latency Time to
Read
Erase Suspend Latency Time to Read
Parameter
Parameter
A
=+25°C and nominal voltages. Assumes corresponding lock-bits are not set.
V
CC
=5V±0.5V, 5V±0.25V, T
V
Notes
CC
2
2
2
2
2
=3.3V±0.3V, T
Typ.
LHF16CZR
15.2
1.2
0.8
1.8
7.1
19
21
V
Notes
(1)
PP
2
2
2
2
2
=3.3V
A
=0°C to +70°C
Max.
21.1
300
300
10
4
6
6
A
Typ.
=0°C to +70°C
0.5
0.4
1.1
5.6
9.4
12
8
(1)
V
CC
Typ.
PP
13.3
12.3
0.7
0.4
1.2
6.6
10
<3.0V and/or V
=5V
V
(1)
PP
Max.
13.1
150
150
1.5
=5V
5
5
7
Max.
17.2
150
150
9.3
2
5
5
Typ.
PP
0.4
0.3
5.2
9.8
10
Typ.
6
1
<3.0V are not
11.6
12.3
0.5
0.3
1.1
7.4
V
(1)
7
PP
V
(3,4)
(1)
PP
=12V
=12V
Max.
12.6
100
100
Max.
7.5
10.4
17.2
125
125
1.5
1
4
4
4
4
Rev. 1.2
Unit
Unit
µs
µs
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s
39