m29f200t STMicroelectronics, m29f200t Datasheet

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m29f200t

Manufacturer Part Number
m29f200t
Description
2 Mbit 256kb X8 Or 128kb X16, Boot Block Single Supply Flash Memory
Manufacturer
STMicroelectronics
Datasheet

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DESCRIPTION
The M29F200 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byteor Word-
by-Word basis using only a single 5V V
For Program and Erase operations the necessary
high voltages are generated internally. The device
can also be programmed in standard program-
mers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application.
July 1998
5V 10% SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
FAST ACCESS TIME: 55ns
FAST PROGRAMMING TIME
– 10 s by Byte / 16 s by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29F200T: 00D3h
– Device Code, M29F200B: 00D4h
Erase Suspend
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
CC
supply.
Figure 1. Logic Diagram
Single Supply Flash Memory
A0-A16
TSOP48 (N)
RP
12 x 20 mm
W
G
E
17
V CC
M29F200B
M29F200T
V SS
M29F200B
M29F200T
44
15
SO44 (M)
1
DQ0-DQ14
DQ15A–1
BYTE
RB
AI01986
1/33

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m29f200t Summary of contents

Page 1

... BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code, M29F200T: 00D3h – Device Code, M29F200B: 00D4h DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Word- ...

Page 2

... M29F200T, M29F200B Figure 2A. TSOP Pin Connections A15 1 48 A16 A14 BYTE A13 V SS A12 DQ15A–1 A11 DQ7 A10 DQ14 A9 DQ6 A8 DQ13 NC DQ5 NC DQ12 W DQ4 M29F200T M29F200B DQ11 (Normal) NC DQ3 RB DQ10 NC DQ2 NC DQ9 A7 DQ1 A6 DQ8 A5 DQ0 ...

Page 3

... KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KBytes or 16 KWords and three Main Blocks of 64 KBytes or 32 KWords. The M29F200T has the Boot Block at the top of the memory address space and the M29F200B locates the Boot Block starting at the bottom ...

Page 4

... MAIN BLOCK 30000h 2FFFFh 64K MAIN BLOCK 20000h 1FFFFh 64K MAIN BLOCK 10000h 0FFFFh 64K MAIN BLOCK 00000h Table 3A. M29F200T Block Address Table Address Range (x8) Address Range (x16) 00000h-0FFFFh 00000h-07FFFh 10000h-1FFFFh 08000h-0FFFFh 20000h-2FFFFh 10000h-17FFFh 30000h-37FFFh 18000h-1BFFFh 38000h-39FFFh 1C000h-1CFFFh ...

Page 5

... DQ0-DQ7. In this mode, DQ8-DQ14 are at high impedance and DQ15A–1 is the LSB address. When BYTE is High, the Word-wide mode is se- lected and the data is read and programmed on DQ0-DQ15. M29F200T, M29F200B , either a Read Electronic level during ID 5/33 ...

Page 6

... The manufacturer’s code for STMi- croelectronics is 20h, the device code is D3h for the M29F200T (Top Boot) and D4h for the M29F200B (Bottom Boot). These codes allow programming equipment or applications to automatically match their interface to the characteristics of the M29F200 ...

Page 7

... V V Don’t Care A12 - A16 Block Address Block Address M29F200T, M29F200B DQ15 DQ8- DQ0-DQ7 A–1 DQ14 Data Data Data Output Output Output Address Data Hi-Z Input Output Data Input Address Data Hi-Z Input Input Hi-Z ...

Page 8

... M29F200T, M29F200B Block Temporary Unprotection. Any previously protected block can be temporarily unprotected in order to change stored data. The temporaryunpro- tection mode is activated by bringing During the temporary unprotection mode the pre- viously protected blocks are unprotected. A block can be selected and data can be modified by ...

Page 9

... When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended. 9. Read Data Polling, Toggle bits or RB until Erase completes. 10.During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased. M29F200T, M29F200B 1st Cyc. 2nd Cyc. 3rd Cyc. ...

Page 10

... M29F200T, M29F200B Table 9. Status Register Bits DQ Name Logic Level Erase Complete or erase ’1’ block in Erase Suspend ’0’ Erase On-going Data 7 Polling Program Complete or data DQ of non erase block during Erase Suspend DQ Program On-going ’-1-0-1-0-1-0-1-’ Erase or Program On-going DQ Program Complete ...

Page 11

... They are followed by an input command or a confirmation command. The Coded cycles consist of writing the data AAh at address AAAAh in the Byte-wide configuration and at address 5555h in M29F200T, M29F200B the Word-wide configuration during the first cycle. During the second cycle the Coded cycles consist DQ2 ...

Page 12

... M29F200T, M29F200B Table 11. AC Measurement Conditions Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 4. AC Testing Input Output Waveform High Speed 3V 0V Standard 2.4V 0.45V (1) Table 12. Capacitance ( MHz ) A Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: 1 ...

Page 13

... Status Register bit DQ5 returns’1’ if there has been an erase failure. In such a situation, the Toggle bit DQ2 can be used to determine which block is not correctly erased. In the case of erase failure, a Read/Reset RD instruction is necessary in order to reset the P/E.C. M29F200T, M29F200B = 5V 10%) CC Test Condition Min ...

Page 14

... No Coded cycles are required. It permits reading of data from another block and programming in another block while an erase operation is in progress. Erase suspend is accepted only during the Block Erase instruction execution. Writing this command during Erase 14/33 M29F200T / M29F200B -55 -70 Test Condition High Speed Standard Interface ...

Page 15

... Erase Resume ER and the Program PG instruc- tions. A Program operation can be initiated during erase suspend in one of the blocks not being erased. It will result in both DQ2 and DQ6 toggling when the data is beingprogrammed. ARead/Reset M29F200T, M29F200B M29F200T / M29F200B -90 -120 Test Condition Standard Standard ...

Page 16

... M29F200T, M29F200B Figure 6. Read Mode AC Waveforms 16/33 ...

Page 17

... Read Array. Either must be tied to V during Power Up to allow maximum security and the possibility to write a command on the first rising edge of E and W. Any write cycle initiation is blocked when Vcc is below V . LKO M29F200T, M29F200B M29F200T / M29F200B -55 -70 High Speed Standard Interface Interface Min ...

Page 18

... Program Erase Valid to RB Delay WHRL BUSY ( High to Write Enable Low PHWL RSP Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 18/33 M29F200T / M29F200B -90 -120 Unit Standard Standard Interface Interface Min Max Min Max 90 120 ...

Page 19

... Figure 7. Write AC Waveforms, W Controlled A0-A16/ A–1 tAVWL E tELWL G tGHWL W DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. M29F200T, M29F200B tAVAV VALID tWLAX tWHEH tWHGL tWLWH tWHWL tDVWH tWHDX VALID tWHRL AI01991 19/33 ...

Page 20

... Program Erase Valid to RB Delay EHRL BUSY ( High to Write Enable Low PHWL RSP Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 20/33 M29F200T / M29F200B -55 -70 Unit High Speed Standard Interface Interface Min Max Min Max ...

Page 21

... Program Erase Valid to RB Delay EHRL BUSY ( High to Write Enable Low PHWL RSP Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. M29F200T, M29F200B M29F200T / M29F200B -90 -120 Unit Standard Standard Interface Interface Min Max Min Max ...

Page 22

... M29F200T, M29F200B Figure 8. Write AC Waveforms, E Controlled A0-A16/ A–1 tAVEL W tWLEL G tGHEL E DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. Figure 9. Read and Write AC Characteristics, RP Related 22/33 tAVAV VALID tELAX tEHWH ...

Page 23

... M29F200T / M29F200B -90 -120 Unit Standard Standard Interface Interface Min Max Min Max 10 2400 10 2400 s 1.0 30 1.0 30 sec 10 2400 10 2400 s 1.0 30 1.0 30 sec 2400 10 2400 s 1 ...

Page 24

... M29F200T, M29F200B Figure 10. Data Polling DQ7 AC Waveforms 24/33 ...

Page 25

... M29F200T, M29F200B Figure 12. Data Toggle Flowchart START READ DQ2, DQ5 & DQ6 DQ2, DQ6 = TOGGLE YES NO DQ5 = 1 YES READ DQ2, DQ6 DQ2, DQ6 = TOGGLE YES FAIL AI01369 5%) M29F200T / M29F200B Min Typ 100k W/E Cycles 0.7 2.4 0.6 0.5 0.9 1.0 2 100,000 NO NO PASS AI01873 Unit Typical after 0.9 sec 2 ...

Page 26

... M29F200T, M29F200B Figure 13. Data Toggle DQ6, DQ2 AC Waveforms 26/33 ...

Page 27

... PROTECT STATUS START BLOCK ADDRESS on A12-A16 Wait Wait 100 Wait Wait 60ns VERIFY BLOCK NO DATA = 01h YES ++ PASS YES FAIL AI01995B M29F200T, M29F200B 27/33 ...

Page 28

... M29F200T, M29F200B Figure 15. All Blocks Unprotecting Flowchart NO ++n = 1000 YES FAIL 28/33 START PROTECT ALL BLOCKS Set- A12, A15 = V IH Wait Wait 10ms Unprotect Verify A1 A12-A16 IDENTIFY BLOCK ...

Page 29

... Note: 1. Speed obtained with High Speed Measurement Conditions. Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options (Speed, Package, etc...) or for further informationon any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. M29F200T, M29F200B ...

Page 30

... M29F200T, M29F200B TSOP48 Normal Pinout - 48 lead Plastic Thin Small Outline 20mm mm Symb Typ Min A A1 0.05 A2 0.95 B 0.17 C 0.10 D 19.80 D1 18.30 E 11. DIE TSOP-a Drawing is not to scale. 30/33 inches Max Typ Min 1.20 0.15 0.002 1.05 0.037 0.27 0.007 0.21 0.004 20.20 0.780 18.50 0.720 12.10 0.469 - 0.020 - 0.70 0.020 ...

Page 31

... TSOP48 Reverse Pinout - 48 lead Plastic Thin Small Outline 20mm mm Symb Typ Min A A1 0.05 A2 0.95 B 0.17 C 0.10 D 19.80 D1 18.30 E 11.90 e 0.50 – DIE TSOP-b Drawing is not to scale. M29F200T, M29F200B inches Max Typ Min 1.20 0.15 0.002 1.05 0.037 0.27 0.007 0.21 0.004 20.20 0.780 18.50 0.720 12.10 0.469 – 0.020 – 0.70 0.020 0. ...

Page 32

... M29F200T, M29F200B SO44 - 44 lead Plastic Small Outline, 525 mils body width mm Symb Typ Min A 2. 0.10 D 28.10 E 13.20 e 1.27 – H 15.90 L 0.80 – 3 – SO-a Drawing is not to scale. 32/33 inches Max Typ Min 2.62 0.095 0.23 0.009 0.50 0.25 0.004 28.30 1.106 13.40 0.520 – 0.050 – ...

Page 33

... STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. M29F200T, M29F200B 33/33 ...

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