is45s16400e Integrated Silicon Solution, Inc., is45s16400e Datasheet - Page 11

• Manufacturer Part Number: is45s16400e
• Description: 1 Meg Bits X 16 Bits X 4 Banks 64-mbit Synchronous Dynamic Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS45S16400E
DC RECOMMENDED OPERATING CONDITIONS
(
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
02/04/08
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
4. V
T
A
V
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CS
= -40°C to +85°C for A1 temperature. T
Symbol
OPR
STG
DD MAX
DDQ MAX
OUT
D MAX
DD
IH
IL
IN
IN
CLK
(min) = GND - 2.0V with a pulse width < 3ns.
(max) = V
V
V
, V
IH
IL
DDQ
DDQ
Parameter
Input Capacitance: Address and Control
Input Capacitance: (CLK)
Data Input/Output Capacitance: I/O0-I/O15
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
+ 2.0V with a pulse width < 3ns.
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
(4)
(3)
(1)
A
= -40°C to +105°C for A2 temperature.)
Min.
(1,2)
-0.3
3.0
2.0
(At T
A
A1
A2
Typ.
= 0 to +25°C, V
3.3
—
—
(2)
–1.0 to V
–1.0 to V
V
DD
Max.
+0.8
3.6
–1.0 to +4.6
–1.0 to +4.6
–55 to +150
-40 to +105
-40 to +85
+ 0.3
Rating
DD
50
1
DDQ
DDQ
= V
+ 0.5
+ 0.5
Unit
DDQ
V
V
V
= 3.3 ± 0.3V, f = 1 MHz)
Unit
mA
°C
°C
W
o
Typ.
V
V
V
V
C
—
—
—
Max.
3.8
3.5
6.5
Unit
pF
pF
pF
11