is45s16400e Integrated Silicon Solution, Inc., is45s16400e Datasheet - Page 14

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is45s16400e

Manufacturer Part Number
is45s16400e
Description
1 Meg Bits X 16 Bits X 4 Banks 64-mbit Synchronous Dynamic Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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IS45S16400E
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
AC TEST CONDITIONS
Input Load
14
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
OUTPUT
CCD
CKED
PED
DQD
DQM
DQZ
DWD
DAL
DPL
BDL
CDL
RDL
MRD
ROH
INPUT
CLK
2.0V
1.4V
0.8V
2.0V
1.4V
0.8V
PARAMETER
Clock Cycle Time
Operating Frequency
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command
to ACTIVE or REFRESH command
Data-out to high-impedance from
PRECHARGE command
t
OH
t
CS
1.4V
t
CH
t
CHI
(Input/Output Reference Level: 1.4V)
t
AC
t
CK
t
CL
1.4V
CL = 3
CL = 2
Output Load
Integrated Silicon Solution, Inc. — www.issi.com
I/O
166
-6
1
1
2
5
2
1
1
6
1
0
0
0
2
2
3
2
50 pF
143
-7
7
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
50
+1.5V
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
02/04/08
Rev. A

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