is45s16400e Integrated Silicon Solution, Inc., is45s16400e Datasheet - Page 12

• Manufacturer Part Number: is45s16400e
• Description: 1 Meg Bits X 16 Bits X 4 Banks 64-mbit Synchronous Dynamic Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS45S16400E
DC ELECTRICAL CHARACTERISTICS
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
2. Icc
3. Input signal chnage once per 30ns.
12
Symbol
I
I
V
V
I
I
I
I
I
I
I
I
I
I
I
I
OL
IL
CC1
CC6
CC2PS
CC3PS
CC2P
CC2N
CC2NS
CC3P
CC3N
CC3NS
CC4
CC5
O H
OL
increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
1
(3)
(3)
and Icc
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
Auto-Refresh Current
Self-Refresh Current
4
depend on the output load. The maximum values for Icc
(1)
(1,2)
Test Condition
0V V
the tested pin at 0V
Output is disabled, 0V V
I
I
One Bank Operation,
Burst Length=1
t
I
CKE V
CKE
CKE V
CKE
t
I
BL = 4; 4 banks activated
t
t
CKE 0.2V
OUT
OUT
RC
OUT
CK
OUT
RC
CLK
= t
= t
= 0mA
= –2 mA
= +2 mA
t
= 0mA
= t
RC
IN
CK
RC
V
V
CLK
(min.)
IL
IL
(
IH
IH
(
V
MIN
MIN
(
DD
(
(
MAX
(
(
MAX
MIN
MIN
(Recommended Operation Conditions unless otherwise noted.)
MIN
)
)
, with pins other than
)
)
)
)
)
OUT
CAS latency = 3
CAS latency = 3
V
CAS latency = 3
DD
t
t
t
t
t
t
t
t
1
CK
CK
CK
CK
CK
CK
CK
CK
Integrated Silicon Solution, Inc. — www.issi.com
and Icc
= 15ns
= 15ns
= 10ns
= 15ns
=
=
=
=
4
are obtained with the output open state.
A1
A2
A1
A2
A1
A2
A1
A2
A1
A2
A1
A2
A1
A1
A2
A1
A1
A2
A1
A1
A2
Speed
-6
-7
-7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-6
-7
-7
-6
-7
-7
—
DD
and GND for each memory
Min.
2.4
–5
–5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
145
130
100
110
150
130
150
0.4
—
95
85
20
15
15
30
25
25
5
5
2
4
1
3
7
7
5
5
2
02/04/08
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
Rev. A
V
V