mt28f004b3vg-8-tet Micron Semiconductor Products, mt28f004b3vg-8-tet Datasheet - Page 16

• Manufacturer Part Number: mt28f004b3vg-8-tet
• Description: 4mb Smart 3 Boot Block Flash Memory
• Manufacturer: Micron Semiconductor Products

NOTE:
09005aef8114a789
F45.fm - Rev. E 6/04 EN
1. Sequence may be repeated to erase additional blocks.
2. Complete status check is not required. However, if SR3 = 1, further ERASEs are inhibited until the status register is
3. To return to the array read mode, the FFh command must be issued. Refer to the ERASE SUSPEND flowchart for more
4. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE or
5. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
cleared.
information.
ERASE operations are allowed by the CEL.
Figure 7: Self-Timed BLOCK ERASE
STATUS REGISTER
ERASE Complete
Check (optional)
Complete Status
V
Block Address
PP
WRITE D0h,
WRITE 20h
= 3.3V or 5V
SR7 = 1?
READ
Start
YES
Sequence
2
3
NO
Suspend ERASE?
1
YES
Sequence
Suspend
NO
ERASE Resumed
4
SMART 3 BOOT BLOCK FLASH MEMORY
16
Figure 8: Complete BLOCK ERASE
Start (ERASE completed)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ERASE Successful
SR4, 5 = 1?
SR3 = 0?
SR5 = 0?
Status-Check Sequence
YES
YES
NO
YES
NO
NO
©2003 Micron Technology, Inc. All rights reserved.
V
Command Sequence Error
BLOCK ERASE Error
PP
Error
5, 6
4Mb
6
6