mt28f004b3vg-8-tet Micron Semiconductor Products, mt28f004b3vg-8-tet Datasheet - Page 19

• Manufacturer Part Number: mt28f004b3vg-8-tet
• Description: 4mb Smart 3 Boot Block Flash Memory
• Manufacturer: Micron Semiconductor Products

Table 10: Capacitance
(T
Table 11: READ and STANDBY Current Drain
Commercial Temperature (0°C ≤ T
NOTE:
09005aef8114a789
F45.fm - Rev. E 6/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS
(CE# ≤ 0.2V; OE# ≥ V
Other inputs ≤ 0.2V or ≥ V
READ CURRENT: BYTE-WIDE, CMOS INPUT LEVELS
(CE# ≤ 0.2V; OE# ≥
Other inputs ≤ 0.2V or ≥
STANDBY CURRENT: TTL INPUT LEVELS
V
(CE# = RP# =
STANDBY CURRENT: CMOS INPUT LEVELS
V
(CE# = RP# =
DEEP POWER-DOWN CURRENT:
STANDBY OR READ CURRENT:
DEEP POWER-DOWN CURRENT:
1. Vcc = MAX Vcc during I
2. I
3. I
A
CC
CC
= 25°C; f = 1 MHz)
CC
CC
power supply standby current
power supply standby current
is dependent on cycle rates.
is dependent on output loading. Specified values are obtained with the outputs open.
V
V
IH
CC
; Other inputs = V
- 0.2V)
V
CC
CC
- 0.2V; f = 5 MHz;
- 0.2V; f = 5 MHz;
V
CC
CC
CC
- 0.2V; RP# ≥ V
tests.
- 0.2V; RP# =
V
V
PP
V
A
CC
PP
IL
≤ +70°C) and Extended Temperature (-40°C ≤ T
SUPPLY (
or
SUPPLY (RP# = V
SUPPLY (RP# = V
V
IH
V
)
CC
V
CC
PP
- 0.2V)
- 0.2V)
≤ 5.5V)
SS
SS
SMART 3 BOOT BLOCK FLASH MEMORY
±0.2V)
±0.2V)
19
1
SYMBOL
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
I
I
I
I
I
I
CC
CC
CC
CC
CC
C
PP
PP
C
O
I
1
2
3
4
6
1
2
A
≤ +85°C)
MAX
MAX
±15
100
12
15
15
20
9
2
5
©2003 Micron Technology, Inc. All rights reserved.
UNITS
UNITS
mA
mA
mA
µA
µA
µA
µA
pF
pF
NOTES
NOTES
4Mb
2, 3
2, 3