MT28F004B3 Micron Semiconductor Products, Inc., MT28F004B3 Datasheet
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MT28F004B3
Manufacturer Part Number
MT28F004B3
Description
4Mb Smart 3 Boot Block Flash Memory, 44-pin Sop, 48-pin Tsop I, 40-pin Tsop I, 0.18um Process Technology
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
1.MT28F004B3.pdf
(30 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT28F004B3VG-8B
Manufacturer:
TI
Quantity:
2 140
FLASH MEMORY
FEATURES
• Seven erase blocks:
• Smart 3 technology (B3):
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
• Byte-wide READ and WRITE only
• TSOP and SOP packaging options
OPTIONS
• Timing
• Configurations
• Boot Block Starting Word Address
• Operating Temperature Range
• Packages
NOTE:
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
80ns access
512K x 8
256K x 16/512K x 8
Top (3FFFFh)
Bottom (00000h)
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
44-pin SOP (MT28F400B3)
48-pin TSOP Type I (MT28F400B3)
40-pin TSOP Type I (MT28F004B3)
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
3.3V ±0.3V V
3.3V ±0.3V V
5V ±10% V
(MT28F400B3, 256K x 16/512K x 8)
(MT28F004B3, 512K x 8)
1. This generation of devices does not support 12V V
compatibility production programming; however, 5V V
application production programming can be used with no
loss of performance.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
PP
MT28F400B3SG-8 T
CC
PP
application/production programming
application programming
Part Number Example:
MT28F004B3
MT28F400B3
MARKING
None
WG
VG
ET
SG
-8
T
B
PP
SMART 3 BOOT BLOCK FLASH MEMORY
PP
1
1
MT28F004B3
MT28F400B3
3V Only, Dual Supply (Smart 3)
GENERAL DESCRIPTION
are nonvolatile, electrically block-erasable (flash), pro-
grammable memory devices containing 4,194,304 bits
organized as 262,144 words (16 bits) or 524,288 bytes (8
bits). Writing or erasing the device is done with either a
3.3V or 5V V
with a 3.3V V
5V V
gramming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal write
or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
for the latest data sheet.
40-Pin TSOP Type I 48-Pin TSOP Type I
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
The MT28F004B3 and MT28F400B3 are organized
Refer to Micron’s Web site (www.micron.com/flash)
PP
is optimal for application and production pro-
PP
voltage, while all operations are performed
CC
. Due to process technology advances,
44-Pin SOP
©2001, Micron Technology, Inc.
4Mb