mt28f008b3vg-9-tet Micron Semiconductor Products, mt28f008b3vg-9-tet Datasheet - Page 19
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mt28f008b3vg-9-tet
Manufacturer Part Number
mt28f008b3vg-9-tet
Description
8mb Smart 3 Boot Block Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT28F008B3VG-9-TET.pdf
(30 pages)
Table 10: Capacitance
(T
Table 11: READ and STANDBY Current Drain
Commercial Temperature (0°C ≤ T
NOTE:
09005aef81136a91
Q10.fm - Rev. E 6/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
READ CURRENT: WORD-WIDE
(CE# ≤ 0.2V; OE# Vcc - 0.2V; f = 5 MHz;
Other inputs ≤ 0.2V or Vcc - 0.2V; RP# Vcc - 0.2V)
READ CURRENT: BYTE-WIDE
(CE# ≤ 0.2V; OE# Vcc - 0.2V; f = 5 MHz;
Other inputs ≤ 0.2V or Vcc - 0.2V; RP# = Vcc - 0.2V)
STANDBY CURRENT: TTL INPUT LEVELS
Vcc power supply standby current
(CE# = RP# = V
STANDBY CURRENT: CMOS INPUT LEVELS
Vcc power supply standby current
(CE# = RP# = Vcc - 0.2V)
DEEP POWER-DOWN CURRENT: Vcc SUPPLY
(RP# = V
STANDBY OR READ CURRENT: V
(V
DEEP POWER-DOWN CURRENT: V
(RP# = V
1. Vcc = MAX Vcc during I
2. I
3. I
A
PP
= 25°C; f = 1 MHz)
CC
CC
≤ 5.5V)
is dependent on cycle rates.
is dependent on output loading. Specified values are obtained with the outputs open.
SS
SS
±0.2V)
±0.2V)
IH
; Other inputs = V
CC
tests.
PP
A
PP
IL
SUPPLY
≤ +70°C) and Extended Temperature (-40°C ≤ T
or V
SUPPLY
IH
)
SMART 3 BOOT BLOCK FLASH MEMORY
19
1
SYMBOL
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
I
I
I
I
I
I
CC
CC
CC
CC
CC
C
PP
PP
C
O
I
1
2
3
4
6
1
2
A
≤ +85°C)
MAX
MAX
±15
100
12
15
15
20
9
2
5
©2001 Micron Technology, Inc. All rights reserved.
UNITS
UNITS
mA
mA
mA
µA
µA
µA
µA
pF
pF
NOTES
NOTES
8Mb
2, 3
2, 3