mt28f008b3vg-9-tet Micron Semiconductor Products, mt28f008b3vg-9-tet Datasheet - Page 20

• Manufacturer Part Number: mt28f008b3vg-9-tet
• Description: 8mb Smart 3 Boot Block Flash Memory
• Manufacturer: Micron Semiconductor Products

Table 12: READ Timing Parameters Electrical Characteristics and Recommended
Commercial Temperature (0°C ≤ T
NOTE:
AC Test Conditions
Input pulse levels. . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 3V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . . . .<10ns
Input timing reference level . . . . . . . . . . . . . . . . . . . . 1.5V
Output timing reference level. . . . . . . . . . . . . . . . . . . 1.5V
Output load. . . . . . . . . . . . . . . . 1TTL gate and CL = 50pF
09005aef81136a91
Q10.fm - Rev. E 6/04 EN
AC CHARACTERISTICS
PARAMETER
READ cycle time
Access time from CE#
Access time from OE#
Access time from address
RP# HIGH to output valid delay
OE# or CE# HIGH to output in High-Z
Output hold time from OE#, CE# or address change
RP# LOW pulse width
1. Vcc = MAX Vcc during I
2. I
CC
is dependent on output loading. Specified values are obtained with the outputs open.
AC Operating Conditions
CC
tests. I
A
≤ +70°C) and Extended Temperature (-40°C ≤ T
CC
is dependent on cycle rates.
1
SMART 3 BOOT BLOCK FLASH MEMORY
20
SYMBOL
t
t
t
RWH
t
t
AOE
t
t
ACE
t
AA
OD
OH
RC
RP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
150
90
0
-9/-9 ET
A
≤ +85°C); Vcc = +3.3V ±0.3V
MAX
1,000
90
40
90
25
©2001 Micron Technology, Inc. All rights reserved.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
8Mb
NOTES
2
2