mt28f008b3vg-9-tet Micron Semiconductor Products, mt28f008b3vg-9-tet Datasheet - Page 25

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mt28f008b3vg-9-tet

Manufacturer Part Number
mt28f008b3vg-9-tet
Description
8mb Smart 3 Boot Block Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet
Timing Parameters
Commercial Temperature (0°C ≤ T
Extended Temperature (-40°C ≤ T
NOTE:
09005aef81136a91
Q10.fm - Rev. E 6/04 EN
SYMBOL
t
t
t
t
t
t
t
t
t
t
1. Address inputs are “Don’t Care” but must be held stable.
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit.
3. Either RP# at V
WC
WPH
WP
AS
AH
DS
DH
CS
CH
VPS1
A0–A18/(A19)
DQ0–DQ15
DQ0–DQ7/
WP#
RP#
WE#
OE#
CE#
V
PP
HH
2
3
3
V
V
MIN
V
200
V
PPH2
PPH1
IL
90
20
50
50
50
V
V
V
V
V
V
V
V
V
V
V
V
V
V
0
0
0
0
HH
or WP# HIGH unlocks the boot block.
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
-9/-9 ET
ERASE SETUP input
t CS
t RS
WRITE SETUP or
t WP
t DS
t AS
A
A
MAX
≤ +85°C)
Note 1
≤ +70°C)
CMD
in
Figure 12: WRITE/ERASE Cycle
WE#-Controlled WRITE/ERASE
t AH
t CH
t WC
t WPH
t DH
WRITE or ERASE (block)
t DS
WRITE data or ERASE
address asserted, and
CONFIRM issued
t VPS1
UNITS
t AS
t VPS2
t RHS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Data-in
CMD/
A
IN
SMART 3 BOOT BLOCK FLASH MEMORY
[Unlock boot block]
[Unlock boot block]
t AH
[3.3V V
[5V V
t DH
t WED1/2/3/4
25
t WB
PP
PP
]
]
SYMBOL
t
t
t
t
t
t
t
t
t
t
VPS2
RS
RHS
WED1
WED2
WED3
WED4
WB
VPH
RHH
(SR7=0)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Status
executed, status register
checked for completion
WRITE or ERASE
1,000
MIN
100
100
100
100
500
200
2
0
0
(SR7=1)
Status
t VPH
t RHH
-9/-9 ET
©2001 Micron Technology, Inc. All rights reserved.
Command for next
operation issued
MAX
DON’T CARE
CMD
in
UNITS
8Mb
ms
ms
ms
ns
ns
ns
µs
ns
ns
ns

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