w29ee011 Winbond Electronics Corp America, w29ee011 Datasheet

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w29ee011

Manufacturer Part Number
w29ee011
Description
128k X 8 Cmos Flash Memory
Manufacturer
Winbond Electronics Corp America
Datasheet

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GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39 S
Optional software-protected data write
128K
- 1 -
8 CMOS FLASH MEMORY
Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
Low power consumption
Automatic program timing with internal V
generation
End of program detection
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Active current: 25 mA (typ.)
Standby current: 20 A (typ.)
Toggle bit
Data polling
Publication Release Date: July 1999
W29EE011
Revision A12
8 bits. The
PP
PP
is

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w29ee011 Summary of contents

Page 1

... The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products) ...

Page 2

... Data Inputs/Outputs DQ0 DQ7 A10 DQ7 29 Chip Enable CE DQ6 28 DQ5 27 DQ4 26 Output Enable OE DQ3 25 GND 24 DQ2 23 Write Enable DQ1 DQ0 Power Supply GND Ground NC No Connection - 2 - W29EE011 DQ0 . OUTPUT . BUFFER DQ7 CORE ARRAY PIN NAME ...

Page 3

... FUNCTIONAL DESCRIPTION Read Mode The read operation of the W29EE011 is controlled by CE and OE, both of which have to be low for the host to obtain data from the outputs used for device selection. When CE is high, the chip is de-selected and only standby power will be consumed the output control and is used to gate data from the output pins ...

Page 4

... Hardware Data Protection The integrity of the data stored in the W29EE011 is also hardware protected in the following ways: (1) Noise/Glitch Protection pulse of less than duration will not initiate a write cycle. (2) V Power Up/Down Detection: The programming operation is inhibited when V DD 3.8V. (3) Write Inhibit Mode: Forcing OE low, CE high high will inhibit the write operation. This prevents inadvertent writes during power-up or power-down periods ...

Page 5

... A1-A16 = A1-A16 = Publication Release Date: July 1999 - 5 - W29EE011 DQ. Dout Din High Z High Z/D OUT High Z/D OUT High Manufacturer Code DA (Hex) ; Device Code IL C1 (Hex) Revision A12 ...

Page 6

... Sequentially load Load data 128 bytes of page data address 5555 Pause 10 mS Load data 55 address 2AAA Exit Load data 20 address 5555 Pause W29EE011 TO DISABLE PROTECTION ADDRESS DATA 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H ...

Page 7

... Load data 55 to address 2AAA Load data 80 to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 10 to address 5555 Pause 50 mS Exit Publication Release Date: July 1999 - 7 - W29EE011 DATA AAH 55H 80H AAH 55H 10H Revision A12 ...

Page 8

... AAH 55H 60H Pause 10 S Product Identification Mode(2, 3) Product Identification Exit(1) Read address = 0 data = DA Read address = 1 data = C1 ; device code is read for W29EE011 SOFTWARE PRODUCT IDENTIFICATION EXIT DATA AAH 55H F0H - - - - - - Pause 10 S Load data AA to address 5555 ...

Page 9

... all I/Os open -0.3V, all I/Os open DD -0.3V/GND DD = GND GND 2 -0.4 mA SYMBOL T .READ PU T .WRITE W29EE011 RATING UNIT -0 +70 C -65 to +150 -0.5 to 12.5 V LIMITS UNIT MIN. TYP. MAX ...

Page 10

... Jig and Scope CONDITIONS MAX I CONDITIONS 1.5V/1.5V 1 TTL Gate and for 70 nS and 100 pF for others. L +5V 1.8K ohm D OUT 1.3K ohm Input Output 1.5V 1.5V Test Point Test Point - 10 - W29EE011 UNIT ...

Page 11

... OES T 10 OEH 150 WPH 0.22 BLC T 300 BLCO and (b) low level signal's reference level Publication Release Date: July 1999 - 11 - W29EE011 W29EE011-15 UNIT MIN. MAX. 150 - nS - 150 nS - 150 TYP. ...

Page 12

... Address A16 High-Z DQ7-0 W29EE011-90 SYM. MIN. MAX. T OEP - 45 T CEP - 90 T OET - 45 T CET - OLZ T CLZ T OH Data Valid W29EE011 W29EE011-15 UNIT MIN. MAX 150 150 nS T OHZ T CHZ High-Z Data Valid ...

Page 13

... OE WE High Z DQ7 OEH WPH T DS Data Valid BLCO CPH OES T OEH T DS Data Valid W29EE011 T BLCO T WC Internal write starts T WC Internal Write Starts Publication Release Date: July 1999 Revision A12 ...

Page 14

... Timing Waveforms, continued Page Write Cycle Timing Diagram Address A16-0 DQ7 Byte 0 Polling Timing Diagram DATA Address A16 DQ7-0 T BLC T WPH WP Byte 1 Byte 2 T CEP T OEH T OEP W29EE011 BLCO Byte N-1 Byte N Internal Write Start T OES X ...

Page 15

... Address A16-0 5555 DQ6 WPH SW0 OEH T WC Byte/page load cycle starts 2AAA 5555 BLC SW2 Byte 0 Byte N-1 SW1 - 15 - W29EE011 T OES BLCO Byte N (last byte) Internal write starts Publication Release Date: July 1999 Revision A12 ...

Page 16

... WPH SW2 SW3 SW1 SW4 Six-byte code for 5V-only software chip erase 5555 5555 2AAA 2AAA BLC WPH SW2 SW3 SW1 SW4 - 16 - W29EE011 T WC 5555 20 T BLCO SW5 Internal programming starts T WC 5555 10 T BLCO SW5 Internal programming starts ...

Page 17

... W29EE011P-15 150 W29EE01190B 90 W29EE01115B 150 W29EE011T90B 90 W29EE011T15B 150 W29EE011P90B 90 W29EE011P15B 150 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. ...

Page 18

... Dimensions D & not include interlead flash Dimension b1 does not include dambar protrusion/intrusion. 3. Controlling dimension: Inches 4. General appearance spec. should be based on final visual inspection sepc W29EE011 Dimension in inches Dimension in mm Symbol Min. Nom. Max. Min. Nom. Max. A 0.210 5.33 A 0.010 ...

Page 19

... E 0.311 0.315 0.319 0.780 0.787 0.795 0.020 L 0.016 0.020 0.024 0.031 0.000 0.004 Note: Controlling dimension: Millimeters Publication Release Date: July 1999 - 19 - W29EE011 Dimension in mm Max. Min. Nom 1.20 __ 0.05 0.15 0.95 1.00 1.05 0.17 0.20 0.23 0.12 0.15 0.17 18.30 18.40 18.50 7.90 8.00 8.10 19.80 20.00 20. 0.50 0.40 0.50 0. 0.80 __ ...

Page 20

... Winbond Electronics North America Corp. Winbond Memory Lab. Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Winbond Microelectronics Corp. Kowloon, Hong Kong Winbond Systems Lab. TEL: 852-27513100 2727 N. First Street, San Jose, FAX: 852-27552064 CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798 - 20 - W29EE011 DESCRIPTION ...

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