w29ee011 Winbond Electronics Corp America, w29ee011 Datasheet - Page 11

• Manufacturer Part Number: w29ee011
• Description: 128k X 8 Cmos Flash Memory
• Manufacturer: Winbond Electronics Corp America

Read Cycle Timing Parameters
(V
Byte/Page-write Cycle Timing Parameters
Note: All AC timing signals observe the following guidelines for determining setup and hold times:
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
Output Hold from Address Change
Write Cycle (Erase and Program)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Byte Load Cycle Time
Byte Load Cycle Time-out
CE
OE
CE
OE
WE and CE Setup Time
WE and CE Hold Time
OE High Setup Time
OE High Hold Time
CE Pulse Width
WE Pulse Width
WE High Width
CC
= 5.0V 10 , V
(a) High level signal's reference level is V
Low to Active Output
Low to Active Output
High to High-Z Output
High to High-Z Output
PARAMETER
PARAMETER
CC
= 5.0 5
for 70 nS, V
IH
SS
and (b) low level signal's reference level is V
= 0V, T
SYM.
T
T
T
T
T
T
T
T
T
OHZ
CHZ
A
CLZ
OLZ
OH
RC
CE
AA
OE
= 0 to 70 C)
SYMBOL
- 11 -
T
T
T
T
T
T
T
T
T
T
T
T
T
T
WC
AS
AH
CS
CH
OES
OEH
CP
WP
WPH
DS
DH
BLC
BLCO
MIN.
90
W29EE011-90
0
0
0
-
-
-
-
-
MIN.
0.22
150
300
50
10
10
70
70
50
10
MAX.
0
0
0
-
90
90
45
45
45
-
-
-
-
Publication Release Date: July 1999
IL
.
TYP.
MIN.
150
W29EE011-15
0
0
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
W29EE011
MAX.
MAX.
150
150
200
70
45
45
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Revision A12
UNIT
UNIT
mS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
S
S