m58wr032et STMicroelectronics, m58wr032et Datasheet - Page 34

• Manufacturer Part Number: m58wr032et
• Description: 32 Mbit 2mb X 16, Multiple Bank, Burst 1.8v Supply Flash Memory
• Manufacturer: STMicroelectronics

M58WR032ET, M58WR032EB
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
ble 14.
Table 14. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. T
34/81
2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3. Excludes the time needed to execute the command sequence.
4. t.b.a. = to be announced
Parameter Block (4 KWord) Erase
Main Block (32 KWord) Erase
Bank (4Mbit) Erase
Parameter Block (4 KWord) Program
Main Block (32 KWord) Program
Word Program
Program Suspend Latency
Erase Suspend Latency
Program/Erase Cycles (per Block)
Parameter Block (4 KWord) Erase
Main Block (32 KWord) Erase
Bank (4Mbit) Erase
Bank (4Mbit) Program (Quad-Enhanced Factory Program)
4Mbit Program
Word/ Double Word/ Quadruple Word Program
Parameter Block (4 KWord)
Program
Main Block (32 KWord) Program
Program/Erase Cycles (per Block)
In the M58WR032E the maximum number
A
= –40 to 85°C; V
(3)
Parameter
(3)
DD
= 1.65V to 2.2V; V
(3)
(3)
(2)
(3)
DDQ
Preprogrammed
Not Preprogrammed
Preprogrammed
Not Preprogrammed
Main Blocks
Parameter Blocks
Quadruple Word
Quadruple Word
Word
Quadruple Word
Word
Main Blocks
Parameter Blocks
= 1.65V to 3.3V.
Condition
Ta-
(3)
of Program/ Erase cycles depends on the voltage
supply used.
100,000
100,000
Min
t.b.a.
Typ
300
510
256
0.3
0.8
1.1
4.5
0.3
0.9
3.5
40
10
32
64
3
5
5
8
8
(4)
100k W/E
Typical
Cycles
after
10
1
3
1000
2500
Max
100
100
2.5
2.5
10
20
4
4
4
cycles
cycles
cycles
cycles
Unit
ms
ms
ms
ms
ms
ms
ms
µs
µs
µs
µs
s
s
s
s
s
s
s
s
s