m58wr032et STMicroelectronics, m58wr032et Datasheet - Page 57

• Manufacturer Part Number: m58wr032et
• Description: 32 Mbit 2mb X 16, Multiple Bank, Burst 1.8v Supply Flash Memory
• Manufacturer: STMicroelectronics

Table 32. CFI Query System Interface Information
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00C0h
000Ah
0017h
0022h
0017h
0004h
0003h
0000h
0003h
0004h
0002h
0000h
Data
V
V
V
V
Typical time-out per single byte/word program = 2
Typical time-out for quadruple word program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for quadruple word = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 millivolts
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 millivolts
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 millivolts
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 millivolts
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
Description
n
n
times typical
ms
n
times typical
n
times typical
n
ms
n
n
n
µs
times typical
µs
M58WR032ET, M58WR032EB
128µs
128µs
Value
16µs
1.7V
2.2V
1.7V
12V
8µs
NA
NA
1s
4s
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