e28f016xd Intel Corporation, e28f016xd Datasheet - Page 27

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e28f016xd

Manufacturer Part Number
e28f016xd
Description
16-mbit 1 Mbit X 16 Dram-interface Flash Memory
Manufacturer
Intel Corporation
Datasheet

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E
NOTES:
1.
2.
3.
4.
5.
6.
All currents are in RMS unless otherwise noted. Typical values at V
currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns and a TTL rise/fall time of <10 ns.
I
of I
Block erases, word programs and lock block operations are inhibited when V
between V
Automatic Power Saving (APS) reduces I
CMOS inputs are either V
Sampled, not 100% tested. Guaranteed by design.
CCES
CCES
is specified with the device de-selected. If the device is read while in Erase Suspend mode, current draw is the sum
and I
PPLK(max)
CC1
/I
CC4
and V
.
PPH1(min)
CC
± 0.2V or GND ± 0.2V. TTL inputs are either V
, between V
CC1
and I
PPH1(max)
CC4
to 1 mA typical in static operation.
and V
PPH2(min)
CC
, and above V
= 5.0V, V
IL
PP
or V
= V
PP
IH
= 12.0V or 5.0V, T = +25 C. These
PPH2(max)
PPLK
.
28F016XD FLASH MEMORY
and not guaranteed in the ranges
.
27

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