tza3047a NXP Semiconductors, tza3047a Datasheet - Page 22

• Manufacturer Part Number: tza3047a
• Description: 30 Mbits/s Up To 1.25 Gbits/s Laser Drivers
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 1 Physical characteristics of the bare die
2003 Jun 05
handbook, full pagewidth
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
30 Mbits/s up to 1.25 Gbits/s laser drivers
PARAMETER
ALRESET
GNDESD
GNDRF
GNDRF
GNDRF
GNDRF
V CCA
V CCA
V CCD
V CCD
TEST
CINQ
DINQ
CIN
DIN
10
12
13
14
15
11
1
2
3
4
5
6
7
8
9
0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m of silicon nitride
minimum dimension of exposed metallization is 80
2.8 m AlCu
380 m nominal
2.560
silicon; electrically connected to GND potential through substrate contacts
<440 C; recommended die attachment is by gluing
<15 s
16
57
2.510 mm (6.43 mm
17
56
18
55
i.c.
Fig.10 TZA3047UH die.
i.c.
19
54
x
20
TZA3047UH
53
i.c.
21
0
22
52
y
0
2.56 mm
22
2
51
)
50
23
49
24
VALUE
48
25
47
i.c.
i.c.
26
38
34
46
TZA3047A; TZA3047B
45
44
43
42
41
40
39
37
36
35
33
32
31
30
29
28
27
80 m (pad size = 90
V CCO
V CCO
BIAS
GNDO
LA
LA
LA
LA
GNDO
GNDO
GNDO
LAQ
LAQ
LAQ
GNDO
PWA
LAQ
MDB319
2.51
mm
Product specification
90 m)