tza3050 NXP Semiconductors, tza3050 Datasheet - Page 11

• Manufacturer Part Number: tza3050
• Description: Tza3050 30 Mbits/s Up To 1.25 Gbits/s Burst Mode Laser Driver
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 5:
T
to 3.47 V; R
R
[1]
[2]
[3]
[4]
9397 750 14806
Product data sheet
Symbol
R
Alarm reset: pin ALRESET
V
V
R
Alarm operating current: pins MAXOP and ALOP
V
N
V
Alarm monitor current: pins MAXMON and ALMON
V
N
V
Reference block: pins RREF and VTEMP
V
V
TC
I
I
source(VTEMP)
sink(VTEMP)
amb
MAXOP
IL
IH
ref(MAXOP)
D(ALOP)L
ref(MAXMON)
D(ALMON)L
RREF
VTEMP
pu(int)
pd(int)
MAXOP
MAXMON
VTEMP
The total power dissipation P
the laser diode voltage which results in a lower total power dissipation.
The specification of the offset voltage is guaranteed by design.
The relation between the sink current I
external load on pin LA. The voltage on pin MODIN programmes the modulation current I
the 100
result in an I
application load.
V
= 40 C to +85 C; R
VTEMP
= 20 k ; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
= 1.31 + TC
AVR
Static characteristics
internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical Z
o(LA)
= 7.5 k ; R
Parameter
internal pull-up
resistance
LOW-level input voltage
HIGH-level input voltage reset
internal pull-down
resistance
reference voltage on
pin MAXOP
ratio of I
I
drain voltage at active
alarm
reference voltage on
pin MAXMON
ratio of I
I
drain voltage at active
alarm
reference voltage
temperature dependent
voltage
temperature coefficient
of V
source current of
pin VTEMP
sink current of
pin VTEMP
MAXOP
MAXMON
current of 80 mA, while 20 mA flows via the internal resistor. This corresponds to a voltage swing of 2 V on the real
VTEMP
VTEMP
oper(alarm)
MON(alarm)
th(j-a)
MODIN
T
tot
j
and T
= 35 K/W; P
is calculated with V
= 6.2 k ; R
and
and
…continued
j
= T
o(LA)
amb
and the modulation current I
Conditions
no reset
I
I
150 mA
I
I
I
3000 A
I
R
C
T
T
MAXOP
oper(alarm)
ALOP
MAXMON
MON(alarm)
ALMON
+ P
tot
j
j
RREF
RREF
BIASIN
= 25 C; C
= 25 C to + 125 C
= 400 mW; V
tot
= 500 A
BIAS
= 10 k (1%);
< 100 pF
= 500 A
= 10 A to 200 A
R
= 6.8 k ; R
Rev. 03 — 7 April 2005
= 10 A to 200 A
th(j-a)
= 7.5 mA to
= V
= 150 A to
VTEMP
CCO
CCA
= 3.3 V and I
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
< 2 nF
PWA
= 3.14 V to 3.47 V; V
= 10 k ; R
mod
is:
BIAS
I
o(LA)
[4]
[4]
= 20 mA. In the application V
RREF
Min
-
-
2.0
-
1.15
-
0
1.15
-
0
1.15
1.14
-
-
1
=
mod
I
= 10 k (1 %); R
mod
CCD
. This current is divided between Z
= 3.14 V to 3.47 V; V
Typ
20
-
-
10
1.2
775
-
1.2
15
-
1.20
1.20
-
-
-------------------------------
100
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2.2
+
100
Z
L LA
MAXMON
BIAS
where Z
TZA3050
Max
-
0.8
-
-
1.25
-
0.4
1.25
-
0.4
1.25
1.27
-
-
will be V
1
L(LA)
= 13 k ;
L(LA)
CCO
of 25
CCO
is the
= 3.14 V
Unit
k
V
V
k
V
V
V
V
V
V
mV/K
mA
mA
L(LA)
11 of 24
minus
will
and