bd829 NXP Semiconductors, bd829 Datasheet
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... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1998 May 29 ...
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... Simplified outline (TO-202; SOT128B) and symbol. CONDITIONS open emitter open base amb 150 mA mA 100 MHz Product specification BD825; BD829 DESCRIPTION MAM305 MIN. TYP. MAX. UNIT 45 V 100 1 ...
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... R thermal resistance from junction to mounting base th j-mb 1998 May 29 CONDITIONS open emitter open base open collector amb CONDITIONS in free air 3 Product specification BD825; BD829 MIN. MAX. UNIT 45 V 100 1.5 A 500 mA ...
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... C = 500 500 mA mA 100 MHz Fig.2 DC current gain; typical values. 4 Product specification BD825; BD829 MIN. TYP. MAX. 100 = 125 100 40 95 165 25 500 1 250 (mA) UNIT ...
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... May scale 8.6 10.1 10.4 24.2 5.08 2.54 8.4 9.9 10.0 23.8 REFERENCES JEDEC EIAJ TO-202 5 Product specification BD825; BD829 ( max 13.3 2.4 3.8 3.9 1.7 2.5 12.2 2.0 3.6 3.7 1.5 EUROPEAN ISSUE DATE PROJECTION 97-02-28 SOT128B w 0.25 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 May 29 6 Product specification BD825; BD829 ...
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... Philips Semiconductors NPN power transistors 1998 May 29 NOTES 7 Product specification BD825; BD829 ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...