bd829 NXP Semiconductors, bd829 Datasheet - Page 2

• Manufacturer Part Number: bd829
• Description: Npn Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN power transistor in a TO-202; SOT128B plastic
package. PNP complements: BD826 and BD830.
QUICK REFERENCE DATA
1998 May 29
V
V
I
P
h
f
SYMBOL
CM
T
FE
High current (max. 1 A)
Low voltage (max. 80 V).
General purpose
Driver stages in hi-fi amplifiers and television circuits.
CBO
CEO
tot
NPN power transistors
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
BD825
BD829
BD825
BD829
PARAMETER
open emitter
open base
T
T
I
I
C
C
amb
mb
= 150 mA; V
= 50 mA; V
50 C
25 C
CONDITIONS
2
CE
PINNING
CE
handbook, halfpage
= 5 V; f = 100 MHz
= 2 V
Fig.1
PIN
1
2
3
Simplified outline (TO-202; SOT128B)
and symbol.
emitter
collector, connected to metal part of
mounting surface
base
1 2 3
95
MIN.
DESCRIPTION
3
BD825; BD829
250
TYP.
Product specification
MAM305
2
1
45
100
45
80
1.5
2
8
165
MAX.
V
V
V
V
A
W
W
MHz
UNIT